Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure

Title
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
Authors
Keywords
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Journal
ACS Applied Materials & Interfaces
Volume 10, Issue 28, Pages 23961-23967
Publisher
American Chemical Society (ACS)
Online
2018-06-25
DOI
10.1021/acsami.8b05549

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