Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 2, Pages 1846-1853Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b16700
Keywords
switchable photovoltaic effect; ferroelectric photovoltaic effect; band gap; hexagonal ferrites; thin film
Funding
- Pohang Steel Corporation (POSCO) [2015Y060, 2016Y038]
- National Research Foundation (NRF) - Korean Government (MSIP) [2016R 1D1A1B 03933253]
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Ferroelectric photovoltaics (FPVs) are being extensively investigated by virtue of switchable photovoltaic responses and anomalously high photovoltages of similar to 10(4)V. However, FPVs suffer from extremely low photocurrents due to their wide band gaps (E-g). Here, we present a promising FPV based on hexagonal YbFeO3 (h-YbFO) thin-film heterostructure by exploiting its narrow E-g. More importantly, we demonstrate enhanced FPV effects by suitably exploiting the substrate-induced film strain in these h-YbFO-based photovoltaics. A compressive-strained h-YbFO/Pt/MgO heterojunction device shows similar to 3 times enhanced photovoltaic efficiency than that of a tensile-strained h-YbFO/Pt/Al2O3 device. We have shown that the enhanced photovoltaic efficiency mainly stems from the enhanced photon absorption over a wide range of the photon energy, coupled with the enhanced polarization under a compressive strain. Density functional theory studies indicate that the compressive strain reduces E-g substantially and enhances the strength of d-d transitions. This study will set a new standard for determining substrates toward thin-film photovoltaics and optoelectronic devices.
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