Power Dissipation of WSe2 Field-Effect Transistors Probed by Low-Frequency Raman Thermometry

Title
Power Dissipation of WSe2 Field-Effect Transistors Probed by Low-Frequency Raman Thermometry
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume -, Issue -, Pages -
Publisher
American Chemical Society (ACS)
Online
2018-06-28
DOI
10.1021/acsami.8b04724

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