Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

Published 2018 View Full Article

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Title
Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 10, Issue 6, Pages 5657-5664
Publisher
American Chemical Society (ACS)
Online
2018-01-22
DOI
10.1021/acsami.7b18242

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