Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 10, Pages 8405-8410Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b01437
Keywords
full-color image sensor; organic semiconductor; photodiode; photodetector; barrier height
Funding
- Space Core Technology Development Program [NRF-2014M1A3A3A02034707]
- MOTIF (Ministry of Trade, Industry Energy) [10051463]
- KDRC (Korea Display Research Corporation)
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Here, we introduce a method of tuning the high-detectivity spectra of the organic photodiode (OPD) to fabricate a thin-film filter-less full-color image sensor. The strategically introduced PIN junction enables a selective activation of excitons generated from the photons with low extinction coefficient in the active layer such that the separated holes/electrons can contribute to the external current. In addition, we show that a well-defined PIN junction blocks the injection of nonallowed charge carriers, leading to very low dark current and near-ideal diode characteristics. Consequently, the high specific detectivity over 1.0 x 10(12) Jones are observed from R/G/B-selective thin-film OPDs.
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