4.8 Article

Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 13, Pages 10618-10621

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b02294

Keywords

graphene field effect transistor; Dirac point; Fermi velocity; asymmetric injection; intrinsic carrier mobility; short-range scattering

Funding

  1. Engineering Physical Sciences Research Council (EPSRC), UK as part of Project GRAPHTED [EP/K016636/1]
  2. Royal Commission for the Exhibition of 1851
  3. EPSRC [EP/K016636/1] Funding Source: UKRI

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A positive shift in the Dirac point in graphene field-effect transistors was observed with Hall-effect measurements coupled with Kelvin-probe measurements at room temperature. This shift can be explained by the asymmetrical behavior of the contact resistance by virtue of the electron injection barrier at the source contact. As an outcome, an intrinsic resistance is given to allow a retrieval of an intrinsic carrier mobility found to be decreased with increasing gate bias, suggesting the dominance of short-range scattering in a single-layer graphene field-effect transistor. These results analytically correlate the field-effect parameters with intrinsic graphene properties.

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