Epitaxy and structural properties of (V,Bi,Sb) 2Te3 layers exhibiting the quantum anomalous Hall effect
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Epitaxy and structural properties of (V,Bi,Sb)
2Te3
layers exhibiting the quantum anomalous Hall effect
Authors
Keywords
-
Journal
PHYSICAL REVIEW MATERIALS
Volume 1, Issue 1, Pages -
Publisher
American Physical Society (APS)
Online
2017-06-27
DOI
10.1103/physrevmaterials.1.011201
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
- (2015) Cui-Zu Chang et al. NATURE MATERIALS
- Coincidence of superparamagnetism and perfect quantization in the quantum anomalous Hall state
- (2015) S. Grauer et al. PHYSICAL REVIEW B
- Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field
- (2015) A. J. Bestwick et al. PHYSICAL REVIEW LETTERS
- Zero-Field Dissipationless Chiral Edge Transport and the Nature of Dissipation in the Quantum Anomalous Hall State
- (2015) Cui-Zu Chang et al. PHYSICAL REVIEW LETTERS
- Metal-to-insulator switching in quantum anomalous Hall states
- (2015) Xufeng Kou et al. Nature Communications
- Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO3
- (2015) Jihwey Park et al. Scientific Reports
- Electronic structure and morphology of epitaxial Bi2Te2Se topological insulator films
- (2014) H. Maaß et al. JOURNAL OF APPLIED PHYSICS
- Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator
- (2014) J. G. Checkelsky et al. Nature Physics
- Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond the Two-Dimensional Limit
- (2014) Xufeng Kou et al. PHYSICAL REVIEW LETTERS
- Suppressing Twin Formation in Bi2Se3Thin Films
- (2014) N. V. Tarakina et al. Advanced Materials Interfaces
- Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates
- (2013) S. Schreyeck et al. APPLIED PHYSICS LETTERS
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- (2013) C.-Z. Chang et al. SCIENCE
- Comparative Study of the Microstructure of Bi2Se3 Thin Films Grown on Si(111) and InP(111) Substrates
- (2012) N. V. Tarakina et al. CRYSTAL GROWTH & DESIGN
- Fragility of Surface States and Robustness of Topological Order inBi2Se3against Oxidation
- (2012) Xiaoxiong Wang et al. PHYSICAL REVIEW LETTERS
- Fermi-Level Tuning of EpitaxialSb2Te3Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
- (2012) Yeping Jiang et al. PHYSICAL REVIEW LETTERS
- Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
- (2011) Desheng Kong et al. ACS Nano
- Surface-Quantized Anomalous Hall Current and the Magnetoelectric Effect in Magnetically Disordered Topological Insulators
- (2011) Kentaro Nomura et al. PHYSICAL REVIEW LETTERS
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- (2010) R. Yu et al. SCIENCE
- Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
- (2009) Y. L. Chen et al. SCIENCE
- Quantum Anomalous Hall Effect inHg1−yMnyTeQuantum Wells
- (2008) Chao-Xing Liu et al. PHYSICAL REVIEW LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now