Article
Materials Science, Multidisciplinary
Meng-Jun Zhou, Bo Wang, Adriana Ladera, Laura Bogula, Han-Xing Liu, Long-Qing Chen, Ce-Wen Nan
Summary: In this study, the formation conditions, morphological features, and polarization configurations of two types of superdomain structures in K0.5Na0.5NbO3 thin films were investigated using phase-field simulations and compared with prior experiments. Several types of superdomain walls with different energies and finite thicknesses were identified, some of which were anomalously wide and electrically conductive.
Article
Chemistry, Inorganic & Nuclear
Cho Sandar Htet, Alicia Maria Manjon-Sanz, Jue Liu, Jing Kong, Frederick P. Marlton, Sanjib Nayak, Mads Ry Vogel Jorgensen, Abhijit Pramanick
Summary: This study reveals the structural factors affecting the AFE/FE order in KxNa1-xNbO3 solid solutions through neutron total scattering experiments, providing a predictive tool for designing solid-solution perovskites with tunable (anti)ferroelectric properties.
INORGANIC CHEMISTRY
(2022)
Article
Physics, Multidisciplinary
Liang Ai-Hua, Wang Xu-Sheng, Li Guo-Rong, Zheng Liao-Ying, Jiang Xiang-Ping, Hu Rui
Summary: This work investigates the effects of K+ content on the photoluminescence (PL) and mechanoluminescent (ML) properties of the ferroelectric matrix KxNa1-xNbO3:0.5%Pr3+ (KxNNOP). It is found that increasing K+ content enhances the crystal symmetry and reduces the PL intensity. Higher K+ content results in specific emission peaks in the PL spectra. Under compressive stress, components with higher K+ content exhibit brighter ML and the ML intensity increases with K+ content. The K0.1NNOP component shows the highest ML intensity emission and repeatability and recoverability characteristics. Trap energy levels and a ML mechanism model in KxNNOP are also investigated.
ACTA PHYSICA SINICA
(2022)
Article
Chemistry, Multidisciplinary
Qinming He, Zhiyuan Tang, Minzhi Dai, Huili Shan, Hui Yang, Yi Zhang, Xin Luo
Summary: Researchers successfully synthesized centimeter-scale 2D ferroelectric In2Se3 films, which exhibit uniform thickness and robust out-of-plane ferroelectricity at room temperature. This finding is of great significance for electronic applications.
Article
Materials Science, Multidisciplinary
Shweta Sharma, Reema Gupta, Monika Tomar
Summary: Controlling the background oxygen gas pressure can tailor lattice strain and significantly improve the electrical and ferroelectric properties of K0.5Na0.5NbO3 thin films deposited using pulsed laser deposition. The optimal gas pressure of 200 mTorr resulted in a film with superior properties, including high polarization, low leakage current, high Curie temperature, and excellent dielectric properties.
MATERIALS CHEMISTRY AND PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Olav W. Sandvik, Aaron Merlin Mueller, Hakon W. Anes, Manuel Zahn, Jiali He, Manfred Fiebig, Thomas Lottermoser, Tadej Rojac, Dennis Meier, Jan Schultheiss
Summary: Mechanical pressure is able to control the structure, electric and magnetic order in solid-state systems, allowing the modification of their physical properties. In this study, we investigate the effect of pressure on a nonferroelastic ferroelectric material, ErMnO3, which is characterized by the absence of classical stress-strain coupling and the formation of domains governed by creation-annihilation processes of topological defects. By annealing ErMnO3 polycrystals under different pressure conditions, we demonstrate the transformation of nonferroelastic vortex-like domains into stripe-like domains, whose width is determined by the applied pressure. This work presents the possibility to utilize mechanical pressure for domain engineering in nonferroelastic ferroelectrics and provides a means to control their dielectric and piezoelectric responses.
Article
Chemistry, Physical
Lukas Valdman, Xixing Wen, Zhizhong Chen, Morris Washington, Toh-Ming Lu, Jian Shi, Gwo-Ching Wang
Summary: This study focuses on separable CdTe(1 1 1) epitaxial films grown on mica substrate using vapor transport deposition, with the interface-surface characterized using ARHEED. The research reveals significant differences between the smooth interface-surface and the rough CdTe surface, with the former exhibiting lower lateral long-range order despite its smoothness.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Multidisciplinary
Yongtao Liu, Anna N. Morozovska, Ayana Ghosh, Kyle P. Kelley, Eugene A. Eliseev, Jinyuan Yao, Ying Liu, Sergei Kalinin
Summary: In this study, the local curvature and strain effects on polarization in CIPS were investigated using piezoresponse force microscopy and spectroscopy. The finite element Landau-Ginzburg-Devonshire model was introduced to explain the observed behaviors and decouple the curvature and strain effects in 2D CIPS. The results showed that bending induced ferrielectric domains in CIPS and the polarization-voltage hysteresis loops differed in bending and nonbending regions. These studies provide important insights into the fabrication of curvature-engineered nanoelectronic devices.
Review
Physics, Applied
C. A. F. Vaz, Y. J. Shin, M. Bibes, K. M. Rabe, F. J. Walker, C. H. Ahn
Summary: This review discusses recent advances in ferroelectric interfacial systems, with a focus on the ferroelectric control of electronic properties and potential applications in controlling correlated states.
APPLIED PHYSICS REVIEWS
(2021)
Article
Materials Science, Multidisciplinary
Xiaojun Qiao, Wenping Geng, Jianwei Meng, Yao Sun, Kaixi Bi, Yun Yang, Junbin Yu, Jian He, Xiujian Chou
Summary: This study investigates the domain dynamics and temperature stability of lead-free ferroelectric thin films, demonstrating their stable ferroelectric states and good temperature endurance. The results provide valuable insights for potential applications in electrical storage devices, especially in high-temperature environments.
MATERIALS RESEARCH EXPRESS
(2021)
Article
Nanoscience & Nanotechnology
Yeong Jae Shin, Juan Jiang, Yichen Jia, Frederick J. Walker, Charles H. Ahn
Summary: BaTiO3 exhibits functional properties like high dielectric constant, large Pockels coefficient, and strong ferroelectricity/piezoelectricity, which can be used for various applications including non-volatile memory devices. Synthesis of BaTiO3 thin films by molecular beam epitaxy allows for growth of coherently strained and ferroelectric BaTiO3 at low temperatures, paving the way for large-scale integration with mainstream electronics platforms. Experimental results demonstrate surface mobility of BaO and TiO2 adatoms conducive to ferroelectric crystal growth at low temperatures.
Article
Nanoscience & Nanotechnology
Suyuan Zhou, Luocheng Liao, Jiahao Chen, Yayun Yu, Zhiquan Lv, Ming Yang, Bowen Yao, Sen Zhang, Gang Peng, Zongyu Huang, Yunya Liu, Xiang Qi, Guang Wang
Summary: Researchers have successfully synthesized two-dimensional layered semiconductor a-In2Se3 nanosheets with rare in-plane ferroelectric stripe domains on mica substrates using a reverse flow chemical vapor deposition method. They found that the contrast of stripe domains is strongly correlated with layer stacking, and the artificial domain structure can manipulate both out-of-plane and in-plane polarizations. The hysteresis loops confirm the ferroelectric property of out-of-plane polarization. The emergence of striped domains enriches the variety of ferroelectric structure types and novel properties of 2D In2Se3, and paves the way for controllable growth of van der Waals ferroelectrics and novel ferroelectric memory device applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Tao Li, Juncai Dong, Nian Zhang, Zicheng Wen, Zhenzhong Sun, Yang Hai, Kewei Wang, Huanyu Liu, Nobumichi Tamura, Shaobo Mi, Shaodong Cheng, Chuansheng Ma, Yunbin He, Lei Li, Shanming Ke, Haitao Huang, Yongge Cao
Summary: By using ITO as the bottom electrode, genuine ultrathin epitaxial films of Si-doped HfO2 can be grown with good ferroelectric properties under epitaxial compressive strain; polar domains can be written and read using piezoforce microscopy and reversibly switched; ferroelectric polarization can be controlled by manipulating the ITO surface polarity to influence the interfacial electrostatic potential.
Article
Chemistry, Multidisciplinary
Song Zhou, Lei Liao, Lan Chen, Baojie Feng, Xiaoyue He, Xuedong Bai, Chuangye Song, Kehui Wu
Summary: This study demonstrates the possibility of maintaining stable in-plane polarization in an extremely thin Bi2WO6 film by using a perfectly lattice-matched NdGaO3 (110) substrate. The residual polarization in this ultrathin film is attributed to the crystal stability of the Bi-O octahedral framework against structural distortions. These findings suggest the potential of the Bi2WO6/NdGaO3 (110) system as a platform for designing low-energy consumption, nonvolatile ferroelectric memories.
Article
Materials Science, Multidisciplinary
Longlong Wu, Wei Wang, Tadesse A. Assefa, Ana F. Suzana, Jiecheng Diao, Hengdi Zhao, Gang Cao, Ross J. Harder, Wonsuk Cha, Kim Kisslinger, Mark P. M. Dean, Ian K. Robinson
Summary: The temperature-dependent behavior of magnetic domains in materials, especially antiferromagnets, is crucial for their magnetic properties. However, accessing the three-dimensional (3D) magnetic domain structures experimentally is very limited. In this study, the researchers used resonant x-ray magnetic Bragg coherent diffraction imaging to track the real-space 3D evolution of antiferromagnetic ordering inside a Sr2IrO4 single crystal as a function of temperature. The results revealed anisotropic changes in the antiferromagnetic domain, indicating an underlying anisotropy in the antiferromagnetic coupling strength within Sr2IrO4.