Journal
ACS SENSORS
Volume 2, Issue 6, Pages 713-717Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acssensors.7b00064
Keywords
chemiresistors; gallium nitride; carbon monoxide; oxygen; gallium oxide
Funding
- priority program Adapting surfaces for high temperature applications of German Research Foundation (DFG) [Gu 992/3-2, SPP 1299]
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We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN for example, upon contact to ambient air atmosphere creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 degrees C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride.
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