4.6 Article

Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface

Journal

ACS ENERGY LETTERS
Volume 2, Issue 7, Pages 1632-1640

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.7b00140

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Funding

  1. Impuls- and Vernetzungsfonds of the Helmholtz Association [VH-NG-423]
  2. European Union's Horizon 2020 research and innovation program [640868]
  3. Office of Basic Energy Sciences of the U.S. Department of Energy [DE-AC02-05CH11231]

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The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a redistribution of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn-Se-Cd-S interlayer. We find direct indications for the presence of Cd-S, Cd-Se, and Cd-Se-Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)-(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.

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