Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 5, Issue 5, Pages 367-371Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2017.2711570
Keywords
Organic thin film transistors; zinc oxide nanowire: perylene diimide blend; solution process; n-channel
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Funding
- Ministry of Science and Technology, Taiwan [MOST 105-2221-E-009-089]
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N-channel solution-processed organic thin film transistors (TFTs) based on a blend network of N,N`-bis(1H,1H-perfluorobutyl)-1,7-dicyanoperylene-3,4: 9,10-tetracarboxylic diimide (PDIF-CN2) and zinc oxide (ZnO) nanowires show remarkable electron field effect mobilities of up to 0.5 cm(2)/ V.s in ambient air, which is about five-fold higher than those based on pristine PDIF-CN2 films. When tested in both bias directions the output and transfer electrical hysteresis of those blend TFTs are negligible. In addition, their low processing temperature and flexible semiconducting layer makes them a highly promising means of realizing high performance, solution-processed n-channel organic TFTs.
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