Polarization-Resolved Near-Field Spectroscopy of Localized States in m -Plane InxGa1−xN/GaN Quantum Wells

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

(2016) P. Dawson et al.   JOURNAL OF APPLIED PHYSICS

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

(2015) K. Gelžinytė et al.   JOURNAL OF APPLIED PHYSICS

Stable vicinal step orientations in m- plane GaN

(2015) K.M. Kelchner et al.   JOURNAL OF CRYSTAL GROWTH

Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence-band parameters in InGaN alloy material

(2015) Shigeta Sakai et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

(2015) S. Schulz et al.   PHYSICAL REVIEW B

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

(2014) S. Marcinkevičius et al.   APPLIED PHYSICS LETTERS

Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well

(2014) S. Marcinkevičius et al.   APPLIED PHYSICS LETTERS

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

(2014) Tsung-Jui Yang et al.   JOURNAL OF APPLIED PHYSICS

Mapping nanoscale light fields

(2014) N. Rotenberg et al.   Nature Photonics

Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra

(2013) S. Marcinkevičius et al.   APPLIED PHYSICS LETTERS

Optical properties of extended and localized states in m-plane InGaN quantum wells

(2013) S. Marcinkevičius et al.   APPLIED PHYSICS LETTERS

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

(2013) Kathryn M. Kelchner et al.   JOURNAL OF CRYSTAL GROWTH

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

(2012) Akio Kaneta et al.   Applied Physics Express

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

(2011) A. Pinos et al.   JOURNAL OF APPLIED PHYSICS

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

(2011) L. Schade et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

(2011) D. Watson-Parris et al.   PHYSICAL REVIEW B

Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy

(2010) Akio Kaneta et al.   Applied Physics Express

Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

(2010) V. Liuolia et al.   APPLIED PHYSICS LETTERS

Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells

(2010) Vytautas Liuolia et al.   JOURNAL OF APPLIED PHYSICS

Near-field evidence of local polarized emission centers in InGaN/GaN materials

(2009) Ruggero Micheletto et al.   APPLIED PHYSICS LETTERS

Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes

(2008) Masashi Kubota et al.   APPLIED PHYSICS LETTERS

Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting

(2008) Hisashi Masui et al.   Journal of the Society for Information Display

Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra

(2008) A. Kaneta et al.   PHYSICAL REVIEW B