p−n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate
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Title
p−n
Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate
Authors
Keywords
-
Journal
Physical Review Applied
Volume 8, Issue 2, Pages -
Publisher
American Physical Society (APS)
Online
2017-08-31
DOI
10.1103/physrevapplied.8.024027
References
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Related references
Note: Only part of the references are listed.- Ballistic conductivity of graphene channel with p-n junction at ferroelectric domain wall
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- Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
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- Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures
- (2010) A. N. Morozovska et al. PHYSICAL REVIEW B
- Graphene Field-Effect Transistors with Ferroelectric Gating
- (2010) Yi Zheng et al. PHYSICAL REVIEW LETTERS
- General approach for the description of size effects in ferroelectric nanosystems
- (2009) Eugene A. Eliseev et al. JOURNAL OF MATERIALS SCIENCE
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- Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
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- Nonlinear Screening and Ballistic Transport in a Graphenep−nJunction
- (2008) L. M. Zhang et al. PHYSICAL REVIEW LETTERS
- Colloquium: Andreev reflection and Klein tunneling in graphene
- (2008) C. W. J. Beenakker REVIEWS OF MODERN PHYSICS
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