Article
Materials Science, Coatings & Films
Su-Hwan Choi, Hyun-Jun Jeong, TaeHyun Hong, Yong Hwan Na, Chi Kwon Park, Myung Yong Lim, Seong Hoon Jeong, Jun Hyung Lim, Jin-Seong Park
Summary: Plasma-enhanced atomic layer deposited indium oxide (InOx) films using a new liquid precursor DATI exhibit high growth efficiency and purity, making them a promising choice for indium oxide semiconductors, particularly in backplane TFTs.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Materials Science, Ceramics
Ah-Jin Cho, Jihoon Jeon, Hong Keun Chung, In-Hwan Baek, Kun Yang, Min Hyuk Park, Seung-Hyub Baek, Seong Keun Kim
Summary: This study investigates the effects of different oxygen sources on the properties of atomic layer deposition (ALD)-grown HZO films. It is found that HZO films grown with O3 have lower impurity content and leakage current, as well as the suppression of nonferroelectric phase, resulting in small coercive field and high electrical reliability.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Multidisciplinary
Yue Yang, Xiao-Ying Zhang, Chen Wang, Fang-Bin Ren, Run-Feng Zhu, Chia-Hsun Hsu, Wan-Yu Wu, Dong-Sing Wuu, Peng Gao, Yu-Jiao Ruan, Shui-Yang Lien, Wen-Zhang Zhu
Summary: Amorphous gallium oxide thin films were grown using plasma-enhanced atomic layer deposition. The films exhibited decreasing band gap energy and increased density as the temperature increased. The higher substrate temperature also resulted in increased surface roughness. Films grown at temperatures below 200 degrees C were amorphous, while the film grown at 250 degrees C showed slight crystallinity.
Article
Chemistry, Physical
Hyeon Joo Seul, Jae Hoon Cho, Jae Seok Hur, Min Hoe Cho, Min Hee Cho, Min Tae Ryu, Jae Kyeong Jeong
Summary: This paper reports the performance improvement of heterojunction channel field-effect transistor using an atomic-layer-deposited InGaZnO (IGZO) channel. By engineering the band-gap through cation composition and thickness modulation, the transistor achieved enhanced mobility and gate bias stability.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Nanoscience & Nanotechnology
Jiye Li, Yuhang Guan, Jinxiong Li, Yuqing Zhang, Yuhan Zhang, ManSun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: To enhance the downscaling potential of top-gate amorphous oxide semiconductor (AOS) thin-film transistors (TFTs), we implemented the ultra-thin gate insulator (GI) using atomic-layer-deposited (ALD) AlOx and HfOx. Both high-k GIs demonstrated good insulation properties even with a physical thickness of 4 nm. However, the HfOx-gated TFT showed higher gate leakage current and poorer subthreshold slope due to the small band offset and defective interface between a-IGZO and HfOx. The imperfect a-IGZO/HfOx interface also caused noticeable positive bias stress instability.
Article
Materials Science, Coatings & Films
Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu, Qingqing Sun, David Wei Zhang, Xingwei Ding, Jack C. Lee, Li Ji
Summary: This study demonstrated a method of semi-insulating doping In2O3 via atomic layer deposition, fabricating indium-aluminum-oxide (IAO) transistors. By controlling the concentration of Al, it achieved high current, excellent mobility, and adjustable threshold voltage by varying Al concentrations.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2022)
Article
Nanoscience & Nanotechnology
Yeonsik Choi, Byunguk Kim, Dowwook Lee, Sooyeon Kang, Jungtae Kim, Jangho Bae, Hyeongtag Jeon
Summary: In this study, SnS2 thin films with different concentrations of zinc doping were successfully prepared using atomic layer deposition. As the doping concentration increased, the optical and electrical properties of the thin films exhibited significant changes, indicating their potential for optoelectronic applications.
ACS APPLIED NANO MATERIALS
(2022)
Article
Chemistry, Physical
Xue Chen, Jiaxian Wan, Hao Wu, Chang Liu
Summary: Passivation of oxide-based thin film transistors still poses a challenge due to the need for thermal treatments, which can impact the transistor characteristics. By reducing the growth temperatures of passivation layers, the performance of TFTs can be maintained within an acceptable range. Among all devices, TFTs with Al2O3 PVLs deposited at 100 degrees C using H2O as oxidant exhibit high mobility, proper threshold voltage, low subthreshold swing, and excellent stability.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Physical
Ales Omerzu, Robert Peter, Daria Jardas, Iztok Turel, Kresimir Salamon, Matejka Podlogar, Damjan Vengust, Ivana Jelovica Badovinac, Ivna Kavre Piltaver, Mladen Petravic
Summary: The study demonstrated a significant enhancement in the photocatalytic activity of thin ZnO films grown by PE-ALD method compared to those grown by the thermal ALD method. Various structural and optical experimental techniques were employed to analyze the physical origin of this difference.
SURFACES AND INTERFACES
(2021)
Article
Chemistry, Physical
Xin-Yue Zhang, Qiang Ren, Chen Wang, Lin Zhu, Wen-Juan Ding, Yan-Qiang Cao, Wei-Ming Li, Di Wu, Ai-Dong Li
Summary: In this study, SnO2, ZnO thin film, and SnO2/ZnO composite thin film hydrogen sensors were fabricated using atomic layer deposition (ALD). The effects of ALD cycles and heat treatment temperatures on the sensing properties were investigated. The SnO2/ZnO composite film sensor exhibited the best hydrogen-sensing performance, attributed to the synergistic effect of the SnO2-ZnO heterojunction and oxygen vacancies in the SnO2 film. ALD may be a feasible strategy for constructing highly sensitive hydrogen sensors based on Si for micro-electromechanical system applications.
APPLIED SURFACE SCIENCE
(2023)
Article
Materials Science, Ceramics
Jihyun Kim, Sungje Lee, Yiwen Song, Sukwon Choi, Jihwan An, Jungwan Cho
Summary: The thermal conductivity of plasma-enhanced atomic layer deposited (PEALD) HZO thin films was investigated. It was found that the effective thermal conductivity slightly decreases with increasing yttrium doping level due to dopant scattering of phonons. The PEALD HZO films were observed to be nanocrystalline.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2021)
Article
Engineering, Electrical & Electronic
Hyun-Jun Jeong, Yoon-Seo Kim, Seok-Goo Jeong, Jin-Seong Park
Summary: Oxide semiconductor thin film transistors (TFTs) have the potential to be used in display and memory devices due to their uniformity and low off-current characteristics. In this study, highly oriented crystalline indium-gallium-zinc oxide (IGZO) thin films and TFTs incorporating such films were fabricated using plasma-enhanced atomic layer deposition (PEALD). The annealing process was conducted at different temperatures, and it was observed that as the annealing temperature increased, device performances and reliability decreased. This study suggests that highly ordered IGZO thin films can be deposited by ALD, and it is possible to manufacture oxide TFTs with excellent electrical performances if the process can retain moderate hydrogen content.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Coatings & Films
Neha Mahuli, Andrew S. Cavanagh, Steven M. George
Summary: Hafnium and zirconium oxyfluoride films can serve as effective protective coatings during plasma processing, with tunable stoichiometry achieved through atomic layer deposition (ALD). Two deposition mechanisms, the nanolaminate method and the HF exchange method, were utilized to grow MOxFy films. Both methods demonstrated compositional tunability, with physical sputtering rates of the films increasing with fluorine concentration.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Nanoscience & Nanotechnology
Hyun Jae Lee, Taehwan Moon, Seung Dam Hyun, Sukin Kang, Cheol Seong Hwang
Summary: The study of 2D electron gas (2DEG) at the interface of amorphous-Al2O3 (a-AO)/ZnO shows promising results, with the potential for application in 2D-based integrated circuits. The Al(CH3)(3) precursor induces 2DEG formation and the resulting transistor exhibits superior performance compared to previous devices.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Yan-Kui Liang, Wei-Li Li, Jun-Yang Zheng, Yu-Lon Lin, Yu-Cheng Lu, Ching-Hua Chiu, Dong-Ru Hsieh, Tsung-Te Chou, Chi-Chung Kei, Huai-Ying Huang, Yu-Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun-Hsiung Lin
Summary: This study presents the fabrication of high-performance atomic layer deposited ultrathin Indium Zinc Oxide thin-film transistors with a short channel length. The transistors exhibit excellent electrical characteristics, including high current and optimized threshold voltage. Moreover, they demonstrate ultra-low drain-induced barrier lowering performance and good gate stability.
IEEE ELECTRON DEVICE LETTERS
(2023)
