Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 7, Issue 4, Pages 1124-1129Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2017.2689163
Keywords
Buffer layer; CuO; CdTe; thin film solar cell
Funding
- National Natural Science Foundation of China [61474103, 51272247]
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The choice of back contact plays a key role in the fabrication of a CdTe thin film solar cell. Material with low electric resistivity, relatively high work function, and thermal stability is needed to form a low barrier contact on a CdTe absorber film. In this work, thin CuO layer was employed as a buffer layer between p-type CdTe and metal electrode. Quantitative band alignment measurement demonstrated that a relatively low energy barrier (similar to 0.44 eV) was formed at the CuO/CdTe interface. CdTe solar cell stability was significantly enhanced when a CuO buffer layer and less Cu were employed in the back contact.
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