4.5 Article

Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing

Journal

IEEE JOURNAL OF PHOTOVOLTAICS
Volume 7, Issue 1, Pages 244-249

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2016.2621340

Keywords

Multicrystalline silicon (mc-Si); photoluminescence (PL); PL band reversal sub-band PL; X-ray fluorescence

Funding

  1. Engineering Research Center Program of the National Science Foundation (NSF)
  2. Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF [EEC-1041895]
  3. DOE Office of Science by Argonne National Laboratory [DE-AC02-06CH11357]

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Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages has been acquired. Both band-to-band PL and sub-bandgap PL (subPL) images showed various regions with different PL signal intensity. Interestingly, in several of these regions a reversal of the subPL intensity was observed right after the deposition of the antireflective coating. In this paper, we present the results of the synchrotron-based nano-X-ray fluorescence imaging performed in areas characterized by the subPL reversal to evaluate the possible role of metal decoration in this uncommon behavior. Furthermore, the acquisition of a statistically meaningful set of data for samples taken at different stages of the solar cell manufacturing allows us to shine a light on the precipitation and rediffusion mechanisms of metal impurities at these grain boundaries.

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