Journal
AIP ADVANCES
Volume 7, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4990566
Keywords
-
Funding
- National Natural Science Foundation of China [51572241, 51572033, 51172208, 11404029]
- Science Foundation of Zhejiang Sci-Tech University (ZSTU) [16062190-Y]
- Science and Technology Department of Zhejiang Province Foundation [2017C37017]
Ask authors/readers for more resources
The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature. The high conductive gallium oxide films deposited at lowtemperature are amorphous, nonstoichiometric, and rich in oxygen vacancy. Large changes in electrical resistance are observed in these non-stoichiometric thin films. The wide variety of hysteretic shapes in the I-V curves depend on the voltage-sweep rate, evidencing that the time-dependent redistribution of oxygen vacancy driven by bias is the controlling parameter for the resistance of gallium oxide. (C) 2017 Author(s).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available