Journal
AIP ADVANCES
Volume 7, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4986751
Keywords
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Funding
- National Science Foundation [DMR-1121288]
- H2020 European programme under project TWINFUSYON [GA692034]
- National Science Foundation as part of the National Nanotechnology Coordinated Infrastructure (NNCI) [ECCS-1542015]
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We investigate the change of the valence band energy of GaAs1-xBix (0<0.025) as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that similar to 75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature. (C) 2017 Author(s).
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