Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
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Title
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
Authors
Keywords
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Journal
Scientific Reports
Volume 7, Issue 1, Pages -
Publisher
Springer Nature
Online
2017-05-25
DOI
10.1038/s41598-017-02710-3
References
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Related references
Note: Only part of the references are listed.- Chemical and structural arrangement of the trigonal phase in GeSbTe thin films
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- Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state
- (2011) Xilin Zhou et al. APPLIED PHYSICS LETTERS
- Disorder-induced localization in crystalline phase-change materials
- (2011) T. Siegrist et al. NATURE MATERIALS
- Estimation of amorphous fraction in multilevel phase-change memory cells
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- Amorphous to fcc-polycrystal transition in Ge2Sb2Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations
- (2009) Pietro La Fata et al. JOURNAL OF APPLIED PHYSICS
- Crystallization of sputtered-deposited and ion implanted amorphous Ge2Sb2Te5 thin films
- (2009) E. Rimini et al. JOURNAL OF APPLIED PHYSICS
- Vibrational properties of hexagonal Ge2Sb2Te5from first principles
- (2009) G C Sosso et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Amorphous-fcc transition in Ge2Sb2Te5
- (2009) S. Lombardo et al. MICROELECTRONIC ENGINEERING
- In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides
- (2008) Se Ahn Song et al. ULTRAMICROSCOPY
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