Journal
SCIENTIFIC REPORTS
Volume 7, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-017-06957-8
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Funding
- National Science Foundation (NSF) [CMMI-1129964]
- SEAS cleanroom of Yale University
- YINQE
- NSF MRSEC [DMR-1119826, DMR-1121288]
- University of Wisconsin-Madison
- National Science Foundation of China [61604077]
- Natural Science Foundation of Jiang Province [BK20140394]
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Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off singlecrystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.
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