Journal
OPTICAL MATERIALS EXPRESS
Volume 7, Issue 7, Pages 2299-2325Publisher
OPTICAL SOC AMER
DOI: 10.1364/OME.7.002299
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Funding
- European Community Seventh Framework Programme [263878]
- Spanish Ministry for Economy and Competitiveness [TEC 2012-38901-C02-01, TEC 2015-69916-C2-1-R]
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Plasmonic and dielectric Mie resonances in subwavelength nanostructures provide an efficient way to manipulate light below the diffraction limit that has fostered the growth of plasmonics and nanophotonics. Plasmonic resonances have been mainly related with the excitation of free charge carriers, initially in metals, and dielectric Mie resonances have been identified in Si nanostructures. Remarkably, although much less studied, semi-metals, semiconductors and topological insulators of the p-block enable plasmonic resonances without free charge carriers and dielectric Mie resonances with enhanced properties compared with Si. In this review, we explain how interband transitions in these materials show a major role in this duality. We evaluate the plasmonic and Mie performance of nanostructures made of relevant p-block elements and compounds, especially Bi, and discuss their promising potential for applications ranging from switchable plasmonics and nanophotonics to energy conversion, especially photocatalysis. (C) 2017 Optical Society of America
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