Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

Published 2017 View Full Article

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Title
Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
Authors
Keywords
HEMT, Back-barrier, Breakdown voltage, JFoM, Cut-off frequency
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 111, Issue -, Pages 1050-1057
Publisher
Elsevier BV
Online
2017-08-03
DOI
10.1016/j.spmi.2017.08.002

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