Forming operation in Ge-rich Ge x Sb y Te z phase change memories

Published 2017 View Full Article

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Title
Forming operation in Ge-rich Ge x Sb y Te z phase change memories
Authors
Keywords
Phase-change memories (PCM), Ge-Sb-Te compounds, Ge-rich GST, SET drift, Forming
Journal
SOLID-STATE ELECTRONICS
Volume 133, Issue -, Pages 38-44
Publisher
Elsevier BV
Online
2017-04-03
DOI
10.1016/j.sse.2017.03.016

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