Design guidelines for GaSb/InAs TFET exploiting strain and device size

Published 2017 View Full Article

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Title
Design guidelines for GaSb/InAs TFET exploiting strain and device size
Authors
Keywords
Full-quantum simulation, Tunnel Field-Effect Transistor (TFET), Strain configurations
Journal
SOLID-STATE ELECTRONICS
Volume 129, Issue -, Pages 157-162
Publisher
Elsevier BV
Online
2016-11-23
DOI
10.1016/j.sse.2016.11.011

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