HfO 2 -based resistive switching memory with CNTs electrode for high density storage

Published 2017 View Full Article

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Title
HfO 2 -based resistive switching memory with CNTs electrode for high density storage
Authors
Keywords
RRAM, HfO, 2, Carbon nanotube, High density storage
Journal
SOLID-STATE ELECTRONICS
Volume 132, Issue -, Pages 19-23
Publisher
Elsevier BV
Online
2017-03-07
DOI
10.1016/j.sse.2017.03.004

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