Journal
SOLID-STATE ELECTRONICS
Volume 127, Issue -, Pages 20-25Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2016.10.003
Keywords
Memristors; Resistive memory devices; Mott transition; Steep MOSFET
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Memristors with steep off-on transitions and high on currents are excellent candidates for very low power and efficient electronics. Owing to their switching mechanism based on ion motion and oxidation/reduction process, memristors bridge the gap between. MEMS and MOSFETs, They have better reliability similar to MOSFETS and at the same time have the more desirable off-to-on current ratios of MEMS. Here we show that by adding a gate electrode to memristors, the SET/RESET voltages in electrochemical memristors can be controlled enabling their applications in circuits with high input/output isolations. We discuss devices with 2 mV/dec sub-threshold slope and show that the gate field effect can be used to modify the SET/RESET voltages considerably. In addition to enabling very low power switches using memristors, the gate can also be used as a global RESET. (C) 2016 Elsevier Ltd. All rights reserved.
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