Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Published 2017 View Full Article

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Title
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
Authors
Keywords
Passivating contact, Silicon solar cells, Chemical oxide, Boron diffusion, Contact resistivity, Hydrogenation, SiC, x, Silicon heterojunction
Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 173, Issue -, Pages 18-24
Publisher
Elsevier BV
Online
2017-06-27
DOI
10.1016/j.solmat.2017.06.039

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