Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 253, Issue -, Pages 461-469Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2017.06.151
Keywords
Al doping; Ethyl acetate; Gas sensor
Funding
- National Natural Science Foundation of China [11574110]
- Project of Science and Technology Development Plan of Jilin Province [20160204013GX]
- Postdoctoral Science Foundation of China [2016M600231]
- Opened Fund of the State Key Laboratory on Applied Optics
- Opened Fund of the State Key Laboratory on Integrated Optoelectronics
- State Grid Corporation of China [SGRIDGKJ[2015]959]
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In2O3 and 2.5-10 at% Al-doped In2O3 are prepared through a simple solvothermal method, and samples are characterized by a variety of methods to investigate the phase and morphological properties. The gas sensing measurements reveal that Al-doped In2O3 has superior ethyl acetate sensing capability as compared to pure In2O3, with the maximum response value approaching 56.3-100 ppm ethyl acetate at 184 degrees C, which is about 2.34 times higher than pure In2O3. In addition, 5 at% Al-doped In2O3 gas sensor is also found to have lower detection limit and better selectivity to ethyl acetate. Hence, Al-doped In2O3 material can be promising for sensing ethyl acetate gas with high performance. Also, the mechanism involved in improving sensing performance of Al-doped In2O3 is discussed. (C) 2017 Elsevier B.V. All rights reserved.
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