Article
Materials Science, Multidisciplinary
Meng-Ting Jiang, Qian Yang, Jian-Long Xu, Yu Yuan, Jing-Yue Zhang, Ya-Nan Zhong, Xu Gao, Sui-Dong Wang
Summary: Monolithically integrated pixels with stacked PbS colloidal quantum dot (CQD) photodiodes and organic blocking diodes are developed for short-wavelength infrared (SWIR) crossbar imaging arrays. These pixels exhibit normally-OFF behavior due to hole blocking under zero and forward biases. This monolithic integration effectively suppresses electrical crosstalk and reduces standby power consumption, resulting in a high-performance visible-SWIR imaging sensor.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Yunxiang Di, Kun Ba, Yan Chen, Xudong Wang, Mingqing Zhang, Xinning Huang, Yi Long, Mengdi Liu, Shukui Zhang, Weiyi Tang, Zhangcheng Huang, Tie Lin, Hong Shen, Xiangjian Meng, Meikang Han, Qi Liu, Jianlu Wang
Summary: A two-dimensional titanium carbide (Ti3C2Tx) MXene film is introduced as an effective transparent conducting electrode in lead sulfide quantum dot photodiodes. Exhibiting exceptional near-infrared transmittance control, interface engineering enhances performance, yielding high detectivity, extensive dynamic response, and notable bandwidth, thereby advancing infrared photodiode technology.
Article
Chemistry, Analytical
Zhixiang Hu, Licheng Zhou, Long Li, Jingyao Liu, Hua-Yao Li, Boxiang Song, Jianbing Zhang, Jiang Tang, Huan Liu
Summary: In this study, a stabilization strategy for PbS CQD gas sensors is proposed by using atomic-ligand engineering. The sensitivity and long-term stability of the PbS CQD gas sensor towards nitrogen dioxide (NO2) are remarkably improved by replacing the oleic acid ligands with halide ligands. The mechanism behind these improvements is investigated through various analysis methods.
SENSORS AND ACTUATORS B-CHEMICAL
(2023)
Article
Chemistry, Multidisciplinary
Mingyu Li, Shiwu Chen, Xinzhao Zhao, Kao Xiong, Bo Wang, Usman Ali Shah, Liang Gao, Xinzheng Lan, Jianbing Zhang, Hsien-Yi Hsu, Jiang Tang, Haisheng Song
Summary: Infrared solar cells incorporating PbS colloidal quantum dots show high efficiency and stability under full-spectrum illumination, with novel energy-level aligned ZnO thin film and hybrid ligand passivation strategies boosting the performance. The development of matched charge extraction and QD passivation approaches is expected to advance QD optoelectronics technology.
Article
Biochemical Research Methods
Duy Ba Ngo, Thanyarat Chaibun, Lee Su Yin, Benchaporn Lertanantawong, Werasak Surareungchai
Summary: This study aimed to develop a highly specific electrochemical DNA sensor using functionalized lead sulphide quantum dots for detecting hepatitis E virus genotype 3 DNA target, showing low detection and quantitation limits.
ANALYTICAL AND BIOANALYTICAL CHEMISTRY
(2021)
Article
Chemistry, Multidisciplinary
Yang Liu, Yiyuan Gao, Qian Yang, Gao Xu, Xingyu Zhou, Guozheng Shi, Xingyi Lyu, Hao Wu, Jun Liu, Shiwen Fang, Muhammad Irfan Ullah, Leliang Song, Kunyuan Lu, Muhan Cao, Qiao Zhang, Tao Li, Jianlong Xu, Suidong Wang, Zeke Liu, Wanli Ma
Summary: We achieved a low-cost and scalable synthesis of SWIR PbS quantum dot inks for the first time through an extensive investigation of reaction kinetics. The solar cell based on these PbS SWIR quantum dot inks exhibited a record-high power conversion efficiency of 1.44% with an 1100 nm cutoff silicon filter, and the photodetector device showed a low dark current density of 2x10(-6) A cm(-2) at -0.8 V reverse bias and a high external quantum efficiency of 70% at approximately 1300 nm. Our results realize the direct synthesis of low-cost and scalable SWIR quantum dot inks and may accelerate the industrialization of consumer SWIR technologies.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Computer Science, Information Systems
Qiwei Xu, Xinghao Tong, Jiangwen Zhang, Xihua Wang
Summary: The solution processibility of colloidal quantum dots (CQDs) allows for direct integration with Si readout integrated circuits (Si-ROCIs), enabling the development of near-infrared (NIR) CMOS image sensors (CIS). This study investigates the feasibility of a NIR CIS based on CQD-Si heterojunction integration through simulation. The results demonstrate that each active pixel in the CQD-Si heterojunction photodiode on the CIS is highly responsive to NIR light, causing changes in electrostatic potentials that can be read out through integrated circuits.
Article
Chemistry, Multidisciplinary
Cong Zhang, Xingtian Yin, Guojiang Qian, Zi Sang, Yawei Yang, Wenxiu Que
Summary: This article presents a solution-phase ligand exchange-based PbS-I quantum-dot-sensitized InGaZnO hybrid phototransistor with excellent air stability and tunable operation mode to meet different detection requirements.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Physical
Miguel Albaladejo-Siguan, David Becker-Koch, Elizabeth C. Baird, Yvonne J. Hofstetter, Ben P. Carwithen, Anton Kirch, Sebastian Reineke, Artem A. Bakulin, Fabian Paulus, Yana Vaynzof
Summary: Light-harvesting devices made from lead sulfide quantum dot absorbers have promising applications in third-generation photovoltaics. Passivating the quantum dot surfaces and managing the excess lead halide can improve device performance and stability.
ADVANCED ENERGY MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Zeyu Zhang, Chen Shang, Justin C. Norman, Rosalyn Koscica, Kaiyin Feng, John E. Bowers
Summary: Quantum dot (QD) lasers grown on silicon have shown promising characteristics, but the technology enabling growth and integration of these lasers on a silicon photonic chip has not yet been demonstrated. A novel device platform has been designed to integrate the QD active region with passive waveguide structures, allowing for the successful demonstration of various high-performance lasers on this platform.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Chemistry, Physical
Junfan Wang, Jun Chen
Summary: A Si: PbS CQD heterojunction near-infrared photodetector was successfully fabricated, and it showed excellent optoelectronic performance. This research is expected to promote the development of related silicon-based near-infrared photodetectors.
SURFACES AND INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Marco Ruggieri, Elisabetta Colantoni, Eleonora Marconi, Andrea Fabbri, Paolo Branchini, Lorenzo Colace, Luca Tortora, Andrea De Iacovo
Summary: Lead sulfide quantum dots (PbS QDs) have been widely used in the fabrication of visible and infrared photodetectors. This study proposes PbS QDs as a sensing material for X-ray detection and successfully synthesizes high-performance PbS QD thin films. The results show that these films exhibit high sensitivity and good detection limits, suggesting potential applications in imaging and future development of low-power, high-sensitivity wearable sensors.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Xingyu Shen, John C. Peterson, Philippe Guyot-Sionnest
Summary: Mid-infrared HgTe colloidal quantum dot electroluminescent devices with high external quantum efficiency and power conversion efficiency were demonstrated. The power conversion efficiency was improved by reducing the resistance of the transparent electrode through the incorporation of a metal conductive grid.
Article
Materials Science, Multidisciplinary
Dan Wu, Gengxin Du, Haochen Liu, Wei Chen, Xin Li, Zhibei Wang, Haodong Tang, Bingyang Liu, Chenxi Liu, Yulong Chen, Zhulu Song, Weiwei Deng, Hongyan Yuan, Kai Wang, Xinyan Zhao
Summary: Flexible microcomb printing technique is used to fabricate PbS QD photoconductors without layer-by-layer ligand exchange, achieving a responsivity of 2.1 A W-1. A computational fluid dynamics model is built to analyze the relationship between key parameters of FMCP and QD film morphology. This method shows promise for scalable and high-performance PbS QD photodetectors.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Stefan W. Tabernig, Lin Yuan, Andrea Cordaro, Zhi Li Teh, Yijun Gao, Robert J. Patterson, Andreas Pusch, Shujuan Huang, Albert Polman
Summary: We have designed an optically resonant bulk heterojunction solar cell to study the optoelectronic properties of nanostructured p-n junctions. By optimizing the nanoscale pattern, we were able to improve the efficiency of the solar cell by enhancing the absorption and charge-carrier extraction behavior. Our experiments and simulations showed significant improvement in infrared response and current gain in the patterned solar cell compared to the planar reference, demonstrating the importance of nanostructured geometries in enhancing solar cell performance.
Article
Chemistry, Multidisciplinary
P. Tim Prins, Federico Montanarella, Kim Dumbgen, Yolanda Justo, Johanna C. van der Bok, Stijn O. M. Hinterding, Jaco J. Geuchies, Jorick Maes, Kim De Nolf, Sander Deelen, Hans Meijer, Thomas Zinn, Andrei Petukhov, Freddy T. Rabouw, Celso De Mello Donega, Daniel Vanmaekelbergh, Zeger Hens
Summary: Experimental evidence supports the principle of producing semiconductor nanocolloids with uniform size distributions through hot injection synthesis. The interaction between the nucleation period and reaction-limited size focusing results in narrow size dispersions.
Article
Nanoscience & Nanotechnology
Weitao Yang, Weiming Qu, Epimitheas Georgitzikis, Eddy Simoen, Jill Serron, Jiwon Lee, Itai Lieberman, David Cheyns, Pawel Malinowski, Jan Genoe, Hongzheng Chen, Paul Heremans
Summary: This study successfully demonstrated NIR photodiodes based on non-fullerene acceptors with ultralow dark current density and high external quantum efficiency by innovating on charge transport layers. The research also showed the versatility of the method for mitigating dark current for different non-fullerene systems in NIR photodiodes, as well as the practical application of NIR organic photodiodes in image sensors.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Vladimir Pejovic, Jiwon Lee, Epimitheas Georgitzikis, Yunlong Li, Joo Hyoung Kim, Itai Lieberman, Pawel E. Malinowski, Paul Heremans, David Cheyns
Summary: The letter introduces a small pixel pitch image sensor optimized for high external quantum efficiency in SWIR, utilizing PbS CQD thin films in CMOS readout arrays to achieve high-pixel density SWIR image sensors. By optimizing the photodiode stack and co-integration process, the prototype image sensor demonstrates less than 5% linearity error and 40% external quantum efficiency in SWIR, enabling acquisition of high-quality images.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Optics
Pieter Geiregat, Carmelita Roda, Ivo Tanghe, Shalini Singh, Alessio Di Giacomo, Delphine Lebrun, Gianluca Grimaldi, Jorick Maes, Dries Van Thourhout, Iwan Moreels, Arjan J. Houtepen, Zeger Hens
Summary: In this study, the researchers analyzed the oscillator strength of exciton transitions in 2D CdSe nanoplatelets using the optically induced Stark effect. They found that the actual oscillator strengths were 50 times smaller than expected based on linear absorption coefficients, suggesting that the exciton absorption line is a sum of low oscillator strength transitions. The authors propose that this discrepancy is due to strong exciton center-of-mass localization and suggest that thermal effects may contribute to exciton localization.
LIGHT-SCIENCE & APPLICATIONS
(2021)
Article
Chemistry, Multidisciplinary
Vladimir Pejovic, Epimitheas Georgitzikis, Itai Lieberman, Pawel E. Malinowski, Paul Heremans, David Cheyns
Summary: Colloidal quantum dot (CQD) infrared image sensors are a cost-effective and high-performance multispectral imaging technology. By engineering the surface of CQDs, these image sensors enable sensing in two spectral channels through the fabrication of two oppositely facing pn junctions. Additionally, the design of an optical cavity reduces spectral crosstalk between the two channels.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Joo Hyoung Kim, Vladimir Pejovic, Epimitheas Georgitzikis, Yunlong Li, Jaenam Kim, Pawel E. Malinowski, Itai Lieberman, David Cheyns, Paul Heremans, Jiwon Lee
Summary: Thin-film-based image sensors, with a thin-film photodiode integrated on CMOS readout circuitry, have gained attention as an imaging platform for low-energy photons. Lead sulfide colloidal quantum dot photodetectors show promise in converting low-energy photons to electric charge carriers. However, there has been a lack of in-depth study on the imaging characteristics of these sensors. In this work, the performance of short-wave infrared sensitive PbS CQD imagers is analyzed, showcasing their potential in achieving high external quantum efficiency.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Vladimir Pejovic, Epimitheas Georgitzikis, Jiwon Lee, Itai Lieberman, David Cheyns, Paul Heremans, Pawel E. Malinowski
Summary: Quantum dots have shown great potential for infrared image sensors, with advantages such as sub-2-mu m pixel pitch and high external quantum efficiencies. With the capability to extend the spectrum into extended SWIR and even mid-wave infrared, QD imagers represent an interesting and dynamic technology segment, promising new possibilities for short-wave infrared imaging.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Pawel E. Malinowski, Jiwon Lee, Epimitheas Georgitzikis, Vladimir Pejovic, Itai Lieberman, Joo-Hyoung Kim, Myung-Jin Lim, Griet Uytterhoeven, Luis Moreno Hagelsieb, Tung Huei Ke, Yunlong Li, Renaud Puybaret, Gauri Karve, Tom Verschooten, Steven Thijs, Paul Heremans, David Cheyns
Summary: Sensors based on quantum dot photodiodes have the potential to improve the quality and accessibility of infrared imaging. In this study, we demonstrate miniaturization with sub-2-mu m pixel pitch arrays and confirm functionality with external quantum efficiencies above 40% at 1450 nm. Monolithic integration enables high throughput and wide deployment of short-wave infrared (SWIR) imagers in previously unaffordable applications.
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
(2023)
Article
Polymer Science
Ewelina Witkowska, Ireneusz Glowacki, Tung-Huei Ke, Pawel Malinowski, Paul Heremans
Summary: This study presents the optimization of multicomponent emissive layer (EML) deposition by slot-die coating for organic light-emitting diodes (OLEDs), with comparisons made to spin-coated EML. The results show that EML prepared by slot-die coating in air can achieve similar performance to spin-coated EML, and further improvements in efficiency can be made by annealing the EML in a nitrogen atmosphere.
Article
Nanoscience & Nanotechnology
Abu Bakar Siddik, Epimitheas Georgitzikis, Yannick Hermans, Jubin Kang, Joo Hyoung Kim, Vladimir Pejovic, Itai Lieberman, Pawel E. Malinowski, Andriy Kadashchuk, Jan Genoe, Thierry Conard, David Cheyns, Paul Heremans
Summary: We present a high-speed low dark current NIR organic photodetector (OPD) with a-IGZO as the ETL on a silicon substrate. Through detailed characterization techniques, the origin of the dark current is understood, and a trap-assisted field-enhanced thermal emission mechanism is identified. By introducing a thin interfacial layer, the dark current is significantly reduced to 125 pA/cm(2) at -1V. With high-mobility metal-oxide transport layers, a fast photo response time of 639 ns (rise) and 1497 ns (fall) is achieved. An imager integrating the NIR OPD demonstrates the significance of improved dark current characteristics in capturing high-quality sample images.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Jaenam Kim, Joo-Hyoung Kim, Yun-Tzu Chang, Jihoon Park, Minhyun Jin, Vladimir Pejovic, Epimitheas Georgitzikis, Steven Thijs, Itai Lieberman, Yunlong Li, Paul Heremans, Pawel Malinowski, Jung-Hoon Chun, Jiwon Lee
Summary: Quantum dot thin-film photodiodes have been extensively studied for their potential in cost-efficient short-wave infrared cameras. This study examines the global shutter mode operation of these photodiodes, specifically the turn on/off operation, and compares it to the conventional voltage domain global shutter mode. The results show that while the turn on/off mode offers the advantage of a smaller pixel size, it also leads to increased nonlinearity as the integration time approaches the photodiode speed limitation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Analytical
Joo Hyoung Kim, Francois Berghmans, Abu Bakar Siddik, Irem Sutcu, Isabel Pintor Monroy, Jehyeok Yu, Tristan Weydts, Epimitheas Georgitzikis, Jubin Kang, Yannick Baines, Yannick Hermans, Naresh Chandrasekaran, Florian De Roose, Griet Uytterhoeven, Renaud Puybaret, Yunlong Li, Itai Lieberman, Gauri Karve, David Cheyns, Jan Genoe, Pawel E. Malinowski, Paul Heremans, Kris Myny, Nikolas Papadopoulos, Jiwon Lee
Summary: In this study, a novel thin-film pinned photodiode structure with low noise and high full well capacity was presented. By using a photogate and integrating thin-film transistors and quantum dot photodiodes, the performance of the pixel was significantly improved, leading to a larger dynamic range and better image quality compared to Si-based image sensors.
Article
Engineering, Electrical & Electronic
Jiwon Lee, Epimitheas Georgitzikis, Yannick Hermans, Nikolas Papadopoulos, Naresh Chandrasekaran, Minhyun Jin, Abu Bakar Siddik, Florian De Roose, Griet Uytterhoeven, Joo Hyoung Kim, Renaud Puybaret, Yunlong Li, Vladimir Pejovic, Gauri Karve, David Cheyns, Jan Genoe, Pawel E. Malinowski, Paul Heremans, Kris Myny
Summary: Organic semiconductor and colloidal quantum-dot-based thin-film image sensors with a pinned photodiode structure exhibit reduced noise, dark current, and image lag. This overcomes the limitations of high kTC noise, dark current, and image lag in thin-film photodiodes. By integrating either an organic or a quantum dot photodiode with silicon readout circuitry, the thin-film image sensors maintain the advantages of both the thin-film materials and the pinned photodiode structure. The image sensor based on the organic absorber achieves a quantum efficiency of 54% at 940 nm and a read noise of 6.1e(-).
NATURE ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Maria Isabel Pintor Monroy, Iakov Goldberg, Karim Elkhouly, Epimitheas Georgitzikis, Lotte Clinckemalie, Guillaume Croes, Nirav Annavarapu, Weiming Qiu, Elke Debroye, Yinghuan Kuang, Maarten B. J. Roeffaers, Johan Hofkens, Robert Gehlhaar, Jan Genoe
Summary: This study focuses on the deposition of CsPbI3 by CsI and PbI2 co-evaporation to fabricate all-inorganic, all-evaporated devices, using NiO and TiO2 as transport layers, and evaluates their performance for both photodetector and solar cell applications. The results show that these devices exhibit low leakage current, high external quantum efficiency, detectivity, and fast response times as photodetectors, while achieving acceptable efficiencies as solar cells.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
