Improved multi-level data storage properties of germanium-antimony-tellurium films by nitrogen doping

Published 2017 View Full Article

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Title
Improved multi-level data storage properties of germanium-antimony-tellurium films by nitrogen doping
Authors
Keywords
Chalcogenide phase-change films, Multi-level data storage, Intermediate resistance state, Insulator-metal transition
Journal
SCRIPTA MATERIALIA
Volume 141, Issue -, Pages 120-124
Publisher
Elsevier BV
Online
2017-08-09
DOI
10.1016/j.scriptamat.2017.08.003

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