Irradiation response of radio-frequency sputtered Al/Gd 2 O 3 /p-Si MOS capacitors

Published 2017 View Full Article

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Title
Irradiation response of radio-frequency sputtered Al/Gd 2 O 3 /p-Si MOS capacitors
Authors
Keywords
Radiation sensor, Gd, 2, O, 3, MOS-based device, Dosimetry
Journal
RADIATION PHYSICS AND CHEMISTRY
Volume 139, Issue -, Pages 114-119
Publisher
Elsevier BV
Online
2017-04-13
DOI
10.1016/j.radphyschem.2017.04.003

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