Electronic and optical properties of α -InX (X = S, Se and Te) monolayer: Under strain conditions

Published 2017 View Full Article

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Title
Electronic and optical properties of α -InX (X = S, Se and Te) monolayer: Under strain conditions
Authors
Keywords
Semiconductor nanosheet, Indium chalcogenides, Optical properties, Band gap, Band structure
Journal
PHYSICS LETTERS A
Volume 381, Issue 15, Pages 1313-1320
Publisher
Elsevier BV
Online
2017-01-31
DOI
10.1016/j.physleta.2017.01.024

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