4.8 Article

Antiferroelectric Topological Insulators in Orthorhombic AMgBi Compounds (A = Li, Na, K)

Journal

PHYSICAL REVIEW LETTERS
Volume 119, Issue 3, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.119.036802

Keywords

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Funding

  1. Office of Naval Research [N00014-16-1-2591, N00014-12-1-1040]
  2. Robinson College, Cambridge
  3. Cambridge Philosophical Society

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We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

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