4.6 Article

Piezoelectricity enhancement and bandstructure modification of atomic defect-mediated MoS2 monolayer

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 19, Issue 35, Pages 24271-24275

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7cp04385f

Keywords

-

Funding

  1. ARO [W911NF-15-1-0535]
  2. NSF [HRD-1137747]
  3. NASA [NNX15AQ03A]
  4. Division Of Human Resource Development
  5. Direct For Education and Human Resources [1137747] Funding Source: National Science Foundation
  6. Div Of Electrical, Commun & Cyber Sys
  7. Directorate For Engineering [1407807] Funding Source: National Science Foundation
  8. NASA [NNX15AQ03A, 802892] Funding Source: Federal RePORTER

Ask authors/readers for more resources

Piezoelectricity appears in the inversion asymmetric crystal that converts mechanical deformation to electricity. Two-dimensional transition metal dichalcolgenide (TMDC) monolayers exhibit the piezoelectric effect due to inversion asymmetry. The intrinsic piezoelectric coefficient (e(11)) of MoS2 is similar to 298 pC m(-1). For the single atomic shift of Mo of 20% along the armchair direction, the piezoelectric coefficient (e(11)) of MoS2 with 5 x 5 unit cells was enhanced up to 18%, and significantly modified the band structure. The single atomic shift in the MoS2 monolayer also induced new energy levels inside the forbidden bandgap. The defect-induced energy levels for a Mo atom shift along the armchair direction are relatively deeper than that for a S atom shift along the same direction. This indicates that the piezoelectricity and band structure of MoS2 can be engineered by a single atomic shift in the monolayer with multi unit cells for piezo-and opto-electric applications.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available