Article
Chemistry, Multidisciplinary
Lulu Wang, Shenyuan Yang, Fan Zhou, Yaqi Gao, Yiwei Duo, Renfeng Chen, Jiankun Yang, Jianchang Yan, Junxi Wang, Jinmin Li, Yanfeng Zhang, Tongbo Wei
Summary: This study demonstrates the epitaxy growth and mechanical transfer of high-quality III-nitrides using 2D materials weakly bonded by van der Waals force. The research shows the achievement of wafer-scale transferrable GaN epilayer with low dislocation density through an AlN/h-BN composite buffer layer and its application in flexible InGaN-based LEDs. First-principles calculations reveal the stronger adsorption energy of Al atoms on O2-plasma-treated h-BN compared to Ga atoms, and propose a strain-relaxation model for nitrides on h-BN.
Review
Chemistry, Multidisciplinary
Bas Van der Zee, Yungui Li, Gert-Jan A. H. Wetzelaer, Paul W. M. Blom
Summary: The various contributions to the external quantum efficiency (EQE) of polymer light-emitting diodes (PLEDs) are discussed. It is found that the inclusion of triplet-triplet annihilation (TTA) contributes significantly to the enhancement of EQE in PLEDs.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Zong-Tao Li, Hong-Wei Zhang, Jia-Sheng Li, Kai Cao, Ziming Chen, Liang Xu, Xin-Rui Ding, Bin-Hai Yu, Yong Tang, Jian-Zhen Ou, Hao-Chung Kuo, Hin-Lap Yip
Summary: This study focuses on the development of tandem structures for perovskite-based multicolor electroluminescence devices, with the aim of achieving excellent luminance- and color-independent tunability. By utilizing a bright and stable blue GaN LED, a Pe-GaN tandem LED with independently tunable luminance and color is successfully realized. The introduction of pulse-width modulation significantly improves the luminance and current efficiency, leading to a record tunable luminance for perovskite-based multi-color LEDs.
Article
Chemistry, Multidisciplinary
K. Rajput, B. R. Mehta, U. Kleinekathofer, T. Frauenheim, D. R. Roy
Summary: This study proposes an alternative to conventional silicon technology by studying the potential of inorganic analogues in molecular electronics. The structure, electronic, and transport properties of nitride analogues are analyzed and compared with organic counterparts. The results demonstrate the potential advantages of inorganic analogues in nanoelectronics applications.
MATERIALS TODAY CHEMISTRY
(2022)
Article
Nanoscience & Nanotechnology
Lulu Zhang, Yangyang Xie, Zhongzhi Tian, Yixuan Liu, Chong Geng, Shu Xu
Summary: This study proposed a new thermal conductive encapsulation technique for PNCs to improve the heat accumulation issue inside PcLEDs, effectively enhancing the long-term stability and durability of PcLEDs.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Xiangyu Fu, Yash Mehta, Yi-An Chen, Lei Lei, Liping Zhu, Nilesh Barange, Qi Dong, Shichen Yin, Juliana Mendes, Siliang He, Renuka Gogusetti, Chih-Hao Chang, Franky So
Summary: The study demonstrates highly directional and polarized light emission from LEDs by selectively diffracting the TE waveguide mode, showing potential for more efficient photonic applications.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Ge Mu, Tianyu Rao, Yawei Qi, Su Ma, Qun Hao, Menglu Chen, Xin Tang
Summary: An optoelectronic device called color-tunable organic light-emitting diode (CTOLED) is developed to achieve interactive signal visualization in the intelligent era. The device enables multicolor visualization of infrared light and temperature distribution through a multi-stimuli responsive silicon sensor. It offers the user the ability to manipulate the device using an infrared pen, influencing the displayed patterns and colors. Additionally, the device can sense temperature and display it in different colors, making it a promising wearable temperature visualization monitor.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Multidisciplinary Sciences
Jin-Hoon Kim, Jin-Woo Park
Summary: An intrinsically stretchable organic light-emitting diode, made of highly stretchable constituent materials, is able to emit light under strains as large as 80%. It has a low turn-on voltage of 8 V and a maximum luminance of 4400 cd m(-2) from both the anode and cathode sides. The device can withstand repeated stretching cycles up to 200 times and shows improved light-emitting efficiency with small stretches up to 50%.
Article
Physics, Condensed Matter
Michael O'Donovan, Mathieu Luisier, Eoin P. O'Reilly, Stefan Schulz
Summary: Recent experimental studies have shown the presence of ballistic hole transport in InGaN multi quantum well structures, with alloy fluctuations giving rise to additional hole transmission channels. This effect is attributed to the breakage/relaxation of k(parallel to)-vector conservation in random alloy cases, resulting in increased ballistic hole transport. The impact of alloy fluctuations on hole transport is more significant compared to electron transport.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2021)
Article
Materials Science, Multidisciplinary
Yong-Ho Ra, Cheul-Ro Lee
Summary: A new approach to reduce the size of photonic device chips is reported, utilizing a monolithic light reflector-nanowire LED system. Vertical cavity nanowire structure for surface-lighting emission is developed using selective area epitaxy, with the light reflection provided by Al metal reflector deposited by MBE technique. The approach shows significantly improved light efficiency at specific spectral wavelength, promising a new route for next-generation photonic and electronic devices.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Physics, Applied
Matthew S. Wong, Nathan C. Palmquist, Jiaxiang Jiang, Philip Chan, Changmin Lee, Panpan Li, Ji Hun Kang, Yong Hyun Baek, Chae Hon Kim, Daniel A. Cohen, Tal Margalith, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Summary: The optical and electrical characteristics of InGaN blue and green micro-LEDs with GaN tunnel junction (TJ) contacts grown by MOCVD were compared at different activation temperatures using three different activation methods. Devices with chemical treatment before activation showed more uniform electroluminescence and higher light output power, indicating advantages for applications requiring high brightness and efficiency.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Lianna Chen, Zhiyuan Qin, Shuming Chen
Summary: In this study, a new method has been developed to achieve high-resolution pixelated emission by controlling the thickness of transparent electrodes, resulting in a color-converting cavity that can selectively convert unpatterned quantum-dot white emission into saturated red, green, and blue emission. This method enables ultrahigh density red, green, and blue emission with a resolution of approximately 1700 pixels per inch, as well as achieving a color gamut of 111% NTSC.
Article
Chemistry, Multidisciplinary
Xingchen He, Lingqiang Meng, Yanliang Liu, Xue Zhang, Ziqiang Cheng, Hao Huang, Rui He, Hao Pan, Yihong Kang, Jia Li, Yiqing Wang, Paul K. Chu, Baomin Xu, Jiahong Wang, Xue-Feng Yu
Summary: Carbon nitride with broken pi-conjugated structure exhibits intense blue-violet electroluminescence with high quantum efficiency, making it desirable for printable and wide-color-gamut display devices.
Article
Multidisciplinary Sciences
Yoshinobu Matsuda, Ryunosuke Umemoto, Mitsuru Funato, Yoichi Kawakami
Summary: A platform for integrating multiple emission wavelengths on a single chip using epitaxial growth and three-dimensional design is presented. This approach overcomes the challenges of phosphor-related issues and complex assembly processes, allowing for flexible spectral control and monolithic integration of different emission colors.
SCIENTIFIC REPORTS
(2023)
Article
Chemistry, Analytical
Claudia Casu, Matteo Buffolo, Alessandro Caria, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini
Summary: This study investigates the defectiveness and degradation mechanisms of InGaN-based quantum wells. By designing a color-coded structure and using numerical simulations, it is found that an increase in traps in the active region is the main cause of degradation. The degradation process consists of two phases, with the first phase occurring in the quantum well closer to the p-contact. The stronger degradation in this well may be due to a lowering of injection efficiency or an increase in SRH recombination.
Article
Engineering, Electrical & Electronic
Yuanchen Chu, Shang-Chun Lu, Nadim Chowdhury, Michael Povolotskyi, Gerhard Klimeck, Mohamed Mohamed, Tomas Palacios
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Physics, Applied
Jana M. Meyer, Jan Scharnetzky, Matthias Berl, Werner Wegscheider, Maik Hauser, Werner Dietsche, Kuang-Chun Wang, Gerhard Klimeck, Lars Tiemann, Robert H. Blick
JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Prasad Sarangapani, Yuanchen Chu, James Charles, Gerhard Klimeck, Tillmann Kubis
PHYSICAL REVIEW APPLIED
(2019)
Article
Physics, Applied
Yuanchen Chu, Jingjing Shi, Kai Miao, Yang Zhong, Prasad Sarangapani, Timothy S. Fisher, Gerhard Klimeck, Xiulin Ruan, Tillmann Kubis
APPLIED PHYSICS LETTERS
(2019)
Article
Chemistry, Physical
Namita Narendra, Xingshuo Chen, Jinying Wang, James Charles, R. Graham Cooks, Tillmann Kubis
JOURNAL OF PHYSICAL CHEMISTRY A
(2020)
Article
Engineering, Electrical & Electronic
Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang, Gerhard Klimeck, Michael Povolotskyi
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Physics, Applied
Kuang-Chung Wang, Roberto Grassi, Yuanchen Chu, Shree Hari Sureshbabu, Junzhe Geng, Prasad Sarangapani, Xinchen Guo, Mark Townsend, Tillmann Kubis
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Engineering, Electrical & Electronic
Daniel A. Lemus, James Charles, Tillmann Kubis
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2020)
Article
Physics, Applied
Kuang-Chung Wang, Daniel Valencia, James Charles, Alex Henning, Megan E. Beck, Vinod K. Sangwan, Lincoln J. Lauhon, Mark C. Hersam, Tillmann Kubis
Summary: Research on van der Waals p-n heterojunctions has revealed anti-ambipolar behavior and gate tunability, with quantum transport modeling the interface physics and achieving qualitative agreement with experiments in terms of anti-ambipolar characteristics and Gaussian function tunability. Carrier recombination was found to determine the overall current density, with two gates controlling recombination by regulating the density of electrons in MoS2 and holes in black phosphorus at the heterojunction area.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck, Mark J. Rodwell, Michael Povolotskyi
Summary: The design of THJ-TFETs addresses the low ON-current challenge of TFETs, but faces limitations due to fabrication challenges with respect to device dimensions and material interfaces. The performance of the original THJ-TFET design is improved by engineering the doping profile to boost resonant tunneling efficiency, resulting in better SS and ON-current. Quantum transport simulations are employed to optimize THJ-TFET design in this study, considering the complexity of devices with multiple quantum wells and material interfaces in the tunneling junction.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
Prasad Sarangapani, James Charles, Tillmann Kubis
Summary: In this study, the band tails of various TMD monolayer and multilayer systems on different dielectric substrates are predicted using density-functional theory. It is found that the band tails critically depend on the layer thickness, temperature, doping concentration, and chosen dielectric substrate.
PHYSICAL REVIEW APPLIED
(2022)
Article
Materials Science, Multidisciplinary
James Charles, Sabre Kais, Tillmann Kubis
ACS MATERIALS LETTERS
(2020)