Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 214, Issue 8, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201600834
Keywords
field-effect transistors; GaN; superjunctions; two-dimensional hole gases
Funding
- EPSRC Doctoral Prize Fellowship by EPSRC
- University of Sheffield
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A comprehensive overview of the novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept, and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and the latest results of the scaled-up PSJ-FETs from POWDEC KK, are also discussed. The article also presents hard-switching characteristics of 400-800V boost converter, constructed using a PSJ-FET grown on sapphire substrate, and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.
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