Influence of Source and Drain Contacts on the Properties of Indium–Gallium–Zinc-Oxide Thin-Film Transistors based on Amorphous Carbon Nanofilm as Barrier Layer
Influence of Source and Drain Contacts on the Properties of Indium–Gallium–Zinc-Oxide Thin-Film Transistors based on Amorphous Carbon Nanofilm as Barrier Layer
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