Ladder-type silsesquioxane copolymer gate dielectrics for gating solution-processed IGZO field-effect transistors

Published 2017 View Full Article

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Title
Ladder-type silsesquioxane copolymer gate dielectrics for gating solution-processed IGZO field-effect transistors
Authors
Keywords
Ladder-type poly(phenyl-co-methacryl silsesquioxane), Gate dielectric, Indium-gallium-zinc oxide, Transistor, Crosslink
Journal
ORGANIC ELECTRONICS
Volume 43, Issue -, Pages 41-46
Publisher
Elsevier BV
Online
2017-01-08
DOI
10.1016/j.orgel.2017.01.009

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