Effect of gamma irradiation on resistive switching of Al/TiO 2 /n + Si ReRAM

Published 2017 View Full Article

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Title
Effect of gamma irradiation on resistive switching of Al/TiO 2 /n + Si ReRAM
Authors
Keywords
Memristive memory, Gamma irradiation effects, ReRAM, PEALD, Space electronics
Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 403, Issue -, Pages 38-44
Publisher
Elsevier BV
Online
2017-05-10
DOI
10.1016/j.nimb.2017.04.091

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