Enhanced electrical property of Ni-doped CoOx hole transport layer for inverted perovskite solar cells

Ultrathin Ni doped CoOx films were prepared by direct current co-sputtering at room temperature as inorganic hole transport materials for inverted perovskite solar cells. P-type doping was designed to adjust the valence band position of CoOx to match the that of CH3NH3PbI3, which would effectively eliminate the interface barrier. Moreover, the hole extraction ability would be enhanced and the power conversion efficiency of the devices hence increased from 3.68% to 9.60%. The optimized performance was also accompanied by decent stability as a result of its intrinsic stability.