Journal
NANOSCALE
Volume 9, Issue 43, Pages 16836-16842Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr05370c
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [51672068]
- National Key R&D Program of China [2016YFB0400600, 2016YFB0400605]
- Scientific Research Foundation of the State Human Resource Ministry for Returned Talent Chinese Scholars [CG2015030001]
- Natural Science Foundation of Hebei Province [B2016202229]
Ask authors/readers for more resources
Quantum dot (QD) silicone nanocomposites are promising luminescent materials for developing high performance light-emitting diodes (LEDs). However, their practical application still faces a critical issue of strong fluorescence quenching in commercial silicone, which is normally induced by the agglomeration of QDs and the impurities such as a Pt-catalyst and oxygen in the silicone matrices. This article reports the development of zinc-terminated polydimethylsiloxane (Zn-PDMS) to passivate CdSe/CdS/ZnS QDs via an in situ approach. The Zn-PDMS passivation protects the QDs from reacting with impurities and provides the mono-dispersion of QDs in silicone resin, leading to over 80% quantum efficiency as well as effective anti-quenching properties for the QD-silicone nanocomposite under an ambient atmosphere. A high performance warm-white LED prototype with direct on-chip packaging using the as-prepared QDs is developed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available