Journal
NANO RESEARCH
Volume 11, Issue 7, Pages 3739-3745Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-017-1945-0
Keywords
two-dimensional materials; MoS2; electrolyte dielectrics; fast polarization response
Categories
Funding
- National Key Research and Development Program [2016YFA0203900]
- Natural Science Foundation of Shanghai [17ZR1446700]
- National Natural Science Foundation of China [61376093, 61622401]
- 1000 Talented Youth Plan
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A spin-coating method was applied to obtain thinner and smoother poly(ethylene oxide) (PEO)/LiClO4 polymer electrolyte films (EFs) with a lower level of crystallization than those obtained using a drop-casting method. When the applied frequency was as high as 10 kHz, the specific capacitance of such EFs with thicknesses of 1.5 mu m was on the order of 1 mu F.cm(-2), a value larger than most of the previously reported results achieved from the same material. We then combined the thin EFs with two-dimensional (2D) materials to fabricate a MoS2 transistor with a top gate right above the channel, defined by a shadow-mask method, and an inverter device. This transistor showed excellent static characteristics and the inverter device showed excellent switching performance at 100 Hz, which indicates a fast polarization response of the thin EFs. Such device architecture is suitable for future low power and flexible electronics based on 2D materials.
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