Journal
NANO LETTERS
Volume 17, Issue 12, Pages 7323-7329Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b02967
Keywords
Ultralong nanostructures; silicon nanowires; VLS; strain sensors; flexible electronics
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Funding
- Major Research Plan of the National Natural Science Foundation of China [91333208]
- National Basic Research Program of China (973 Program) [2013CB933500]
- National Natural Science Foundation of China [51373188]
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- 111 Project
- Qing Lan Project
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The elongation of free-standing one-dimensional (1D) functional nanostructures into lengths above the millimeter range has brought new practical applications as they combine the remarkable properties of nanostructured materials with macroscopic lengths: However, it remains a big challenge to prepare ID silicon nanostructures, one of the most important 1D nanostructures, with lengths above the millimeter range. Here we report the unprecedented preparation of ultralong single-crystalline Si nanowires with length up to 2 cm, which can function as the smallest active material to facilitate the miniaturization of macroscopic devices. These ultralong Si nanowires with augmented flexibility are of emerging interest for flexible electronics. We also demonstrate the first single-nanowire-based wearable joint motion sensor with superior performance to reported systems, which just represents one example of novel devices that can be built from these nanowires. The preparation of ultralong Si nanowires will stimulate the fabrication and miniaturization of electric, optical, medical, and mechanical devices to impact the semiconductor industry and our daily life in the near future.
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