Intrinsic resistance switching in amorphous silicon oxide for high performance SiO x ReRAM devices

Published 2017 View Full Article

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Title
Intrinsic resistance switching in amorphous silicon oxide for high performance SiO x ReRAM devices
Authors
Keywords
ReRAM, Silicon oxide, Intrinsic, Resistance switching, STEM
Journal
MICROELECTRONIC ENGINEERING
Volume 178, Issue -, Pages 98-103
Publisher
Elsevier BV
Online
2017-05-03
DOI
10.1016/j.mee.2017.04.033

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