The effects of process temperature on the work function modulation of ALD HfO 2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor
The effects of process temperature on the work function modulation of ALD HfO 2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor
Authors
Keywords
ALD HfO, 2, ALD TiN, TDMAT precursor, Work function
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