Article
Optics
Haojie An, Jinshi Wang, Huaiyu Cui, Fengzhou Fang
Summary: This paper presents an experimental study on the laser-induced atomic and close-to-atomic scale structure of 4H-SiC using a capillary-discharged extreme ultraviolet pulse. The modification mechanism at the close-to-atomic scale is investigated through molecular dynamics simulations. The results show the formation of stripe-like structures and laser-induced periodic surface structures, demonstrating the potential of extreme ultraviolet pulses for semiconductor manufacturing at the close-to-atomic scale.
Article
Optics
Bing Dong, Zongwei Xu, Changkun Shi, Kun Zhang, Yuheng Zhang, Rushuai Hua, Wei Zhao, Jianshi Wang
Summary: In this study, a method for fabricating high-quality micro-nanostructures of 4H-SiC using vector polarized light was proposed. The influences of linear polarization and vector polarization on the quality and surface morphology of processed SiC microgrooves were studied. The study showed that using vector beam, especially azimuthal polarization beam, can ensure the uniformity of the processing area, reduce micro-cracks and obtain better processing quality.
OPTICS AND LASER TECHNOLOGY
(2023)
Article
Chemistry, Analytical
Lukang Wang, You Zhao, Yu Yang, Manman Zhang, Yulong Zhao
Summary: This study investigates the effects of processing parameters on the results of femtosecond laser ablation of SiC material, providing insights for achieving precise, controllable, and high-quality machining of SiC using infrared femtosecond laser.
Article
Metallurgy & Metallurgical Engineering
Jian-qiang Chen, Xiao-zhu Xie, Qing-fa Peng, Zi-yu He, Wei Hu, Qing-lei Ren, Jiang-you Long
Summary: In this study, ablation experiments were conducted on 4H-SiC substrates with different surface roughness using femtosecond laser irradiation. The effect of surface roughness on the ablation morphology and periodic structures was investigated. It was found that deep subwavelength ripples can be generated on substrates with high surface roughness, and the ablation threshold tends to decrease and stabilize with an increase in the number of pulses.
JOURNAL OF CENTRAL SOUTH UNIVERSITY
(2022)
Article
Materials Science, Multidisciplinary
Xiangjing Guo, Haiying Song, Yachao Li, Peng Wang, Shibing Liu
Summary: In this paper, a colloidal solution of silicon carbide (SiC) nanoparticles is obtained using femtosecond laser ablation. The nanoparticles are spherical and uniform in size with an average diameter of 2.84 nm. The crystal structure of the nanoparticles is confirmed to be 4H-SiC. The colloidal solution exhibits strong absorption in the ultraviolet region and the SiC nanoparticles show reverse saturation absorption characteristics.
Article
Optics
Jean Y. Tovar-Sanchez, M. B. de la Mora, Tupak Garcia-Fernandez, Miguel A. Valverde-Alva, Citlali Sanchez-Ake, Rene Garcia-Contreras, Rosalba Castaneda-Guzman, Mayo Villagran-Muniz
Summary: Polymer-gold nanoparticle nanocomposites based on POSS polymer with a thiol group were obtained by laser ablation in liquids. The nanocomposites showed spherical geometry of the Au NPs mainly smaller than 60 nm, with typical absorbance spectra for spherical Au NPs in the visible range. The nanocomposites exhibited an improvement in colloid stability, absorbance peak, and reproducibility compared to NPs without POSS-thiol.
OPTICS AND LASER TECHNOLOGY
(2022)
Article
Chemistry, Physical
Yuhua Huang, Yuqi Zhou, Jinming Li, Fulong Zhu
Summary: Femtosecond laser surface modification improves the machinability of SiC, but caution should be taken for the heat effect and subsurface void generation.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Amnah S. Abd-Alrahman, Raid A. Ismail, Mudhafar A. Mohammed
Summary: This study investigates the structural and optical properties of colloidal suspensions of CsHgI3 nanoparticles synthesized by laser ablation in liquid. X-ray diffraction confirms the formation of multiple crystal phases, while photoluminescence spectra show the presence of two emission peaks. Transmission electron microscopy and scanning electron microscopy images confirm the formation and morphology change of nanoparticles. The optical energy gap of CsHgI3 varies with laser fluence, and the photodetectors show good performance at room temperature.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Computer Science, Information Systems
Erjun Wang, Xiaoli Tian, Jiang Lu, Xinhua Wang, Chengzhan Li, Yun Bai, Chengyue Yang, Yidan Tang, Xinyu Liu
Summary: In this study, a novel silicon carbide insulated gate bipolar transistor (IGBT) with a 4H-SiC/Si heterojunction in the buffer layer (HBL) is proposed to improve the turn-off characteristic. The simulation results show that the proposed HBL-IGBT achieves a reduction of 28.6% in turn-off time and 47.5% in turn-off loss compared to the conventional 4H-SiC IGBT. The heterojunction of the HBL-IGBT can be formed with the plasma-activated direct bonding technology, which is compatible with the conventional fabrication process.
Article
Optics
Feng Yang, Zhigang Dong, Renke Kang, Cheng Liu, Dongjiang Wu, Guangyi Ma
Summary: Reaction-bonded silicon carbide composites exhibit a complex ablation mechanism under femtosecond laser irradiation. The ablation threshold decreases with increasing pulse number and stabilizes. Photochemical ablation dominates at low fluence and low pulse number, while photothermal ablation dominates at higher fluence and pulse number. A preliminary model of the ablation mechanism was established based on surface morphology, microstructure, and physical phase analysis.
Article
Physics, Multidisciplinary
Meixia Cheng, Suzhen Luan, Hailin Wang, Renxu Jia
Summary: This paper presents a beta-Ga2O3/4H-SiC heterojunction lateral metal-oxide-semiconductor field-effect transistor (HJFET), which utilizes the characteristics of PN junction by adding p-doped SiC in the channel region. The heterojunction metal-oxide-semiconductor field-effect transistor (MOSFET) shows improved threshold voltage and achieves normally-off operation with a positive threshold voltage of 0.82 V. The device also demonstrates a high off-state breakdown voltage of 1817 V and a maximum transconductance of 15.3 mS/mm. Simulations of the SiC thickness, length, and doping in each region of the epitaxial layer yield the optimal PFOM. This structure provides a feasible idea for high-performance beta-Ga2O3 MOSFET.
Article
Chemistry, Analytical
Zhe Zhang, Zhidong Wen, Haiyan Shi, Qi Song, Ziye Xu, Man Li, Yu Hou, Zichen Zhang
Summary: The novel dual laser beam asynchronous dicing method (DBAD) improves cutting quality of SiC wafers by introducing micro-cracks with pulsed laser and generating thermal stress with continuous wave laser. The method shows great potential for future engineering applications in cutting of hard-brittle materials.
Article
Engineering, Electrical & Electronic
Lukang Wang, You Zhao, Yu Yang, Xing Pang, Le Hao, Yulong Zhao
Summary: This paper introduces a bulk 4H-SiC pressure sensor with controllable diaphragm thickness prepared by femtosecond laser. The sensor exhibits high sensitivity, small errors, and good dynamic response performance. The research demonstrates the potential of employing femtosecond laser technology for preparing SiC pressure sensors for extreme temperature environments.
IEEE SENSORS JOURNAL
(2022)
Article
Materials Science, Ceramics
Jiayong Wei, Songmei Yuan, Jiaqi Zhang, Ning Zhou, Wei Zhang, Jiebo Li, Wenzhao An, Mengxuan Gao, Yanzhe Fu
Summary: This paper explores a novel method for underwater femtosecond laser ablation of SiC/SiC composites to obtain high cleanliness, low-oxidation microporous surfaces. The changes in hole depth, material removal rate (MRR), surface morphology, and material components during underwater femtosecond laser ablation are systematically analyzed, and the formation of typical features such as induced cones, small banded pits, fiber debonding and shedding is explained.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2022)
Article
Chemistry, Multidisciplinary
Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schiliro, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Bela Pecz, Marianna Spankova, Stefan Chromik
Summary: In this study, 2D/3D heterojunction diodes were fabricated using pulsed laser deposition. The doping levels of SiC surfaces were varied to investigate the transport properties of MoS2. The results showed that surface doping of SiC can significantly influence the current injection across the heterojunctions, resulting in highly rectifying behavior and enhanced current injection. The dominant mechanisms governing current flow were identified, and the effective barriers for different contacts were determined.
ADVANCED MATERIALS INTERFACES
(2023)
Article
Materials Science, Ceramics
Mohammed A. Jabr, Abdullah M. Ali, Raid A. Ismail
Summary: In this study, a copper oxide thin film was prepared using the CW laser assisted-chemical bath deposition (LACBD) technique. The effect of laser wavelength on the structural, optical, and electrical properties of CuO film was investigated. Increasing the laser wavelength resulted in decreasing the grain size of the film and enhancing the crystallization. The p-CuO/n-Si heterojunction photodetectors exhibited two peaks of response at 450 nm and 800 nm.
CERAMICS INTERNATIONAL
(2023)
Article
Chemistry, Multidisciplinary
Ghufran S. Jaber, Khawla S. Khashan, Maha Jamal Abbas, Nathier A. Ibrahim
Summary: Pulsed laser ablation in liquid media was used to prepare zinc oxide nano-particles (NPs) to enhance glass ionomer restorative. The synthesized ZnO NPs were confirmed using UV-Visible spectroscopy, XRD, and TEM. The absorption spectra showed increased absorbance intensity with more laser pulses and a peak at 230 nm due to quantum confinement. XRD analysis revealed a hexagonal crystalline structure, while TEM images showed nanorod and spherical nanoparticles. ZnO NPs with glass ionomer exhibited improved antibacterial activity against Streptococcus mutans bacteria, and the compressive strength test demonstrated significant enhancement with increased ZnO NP concentration.
JOURNAL OF THE INDIAN CHEMICAL SOCIETY
(2023)
Article
Engineering, Electrical & Electronic
Fatema H. Rajab, Rana M. Taha, Aseel A. Hadi, Khawla S. Khashan, Rana O. Mahdi
Summary: For the first time, laser induced hydrothermal growth (LIHG) process was used to obtain high quality ZnO rods on a p-type Si (111) substrate without expensive and complex equipment. X-ray diffraction, field emission scanning electron microscope, and UV-VIS spectroscopy were employed to investigate the structural and optical properties of ZnO rods. The ZnO/Si hetero-structured nanorods device exhibited superior responsivity and specific detectivity at a wavelength of 350 nm.
OPTICAL AND QUANTUM ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Susan H. H. Salman, Khawla S. S. Khashan, Aseel A. A. Hadi
Summary: The technique of pulsed laser ablation in liquid media was used to synthesize Palladium structures in nanoscale for antibacterial activity. The synthesized Pd NPs were characterized using FT-IR, XRD, TEM, and UV-Vis spectroscopy. The Pd NPs showed a face-centered cubic structure, with spherical shape and sizes ranging from a few nanometers to several tens of nanometers. The antibacterial activity of Pd NPs was higher against Gram-negative bacteria compared to Gram-positive bacteria.
Article
Engineering, Electrical & Electronic
Mustafa A. Hassan, Mayyadah H. Mohsin, Raid A. Ismail
Summary: This study demonstrates the fabrication and characterization of a strontium-doped CuO/Si photodetector using chemical spray pyrolysis. The structural, electrical, and optical properties of the CuO film and strontium-doped CuO film at different doping concentrations are investigated. The photodetectors show improved responsivity and specific detectivity after doping with strontium.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Physics, Multidisciplinary
Mayyadah H. Mohsin, Khawla S. Khashan, Ghassan M. Sulaiman
Summary: In this paper, hexagonal BN, Gd2O3 nanoparticles, and BN@Gd2O3 hybrid nanocomposites were synthesized by novel laser ablation in liquid. Various analytical techniques were used to investigate their structural and optical properties. The results showed the formation of h-BN NPs, sheet-like and spherical nanoparticles, hexagonal-type nanoflake of Gd2O3, and needle-like shapes. The optical energy gap of h-BN, Gd2O3, and h-BN@Gd2O3 was found to be in the range of (4.5-5.5) eV.
Article
Chemistry, Physical
Susan Hasan, Khawla S. S. Khashan, Aseel A. A. Hadi
Summary: In this study, Pd@Ag(core/shell) nanoparticles were synthesized using Q-switched Nd:YAG laser at a wavelength of 1064 nm in distilled water. The synthesized nanoparticles were characterized by various techniques, including UV-visible spectrophotometry, FT-IR, XRD, TEM, and EDS. The results showed that the Pd@Ag core-shell nanoparticles exhibited excellent antibacterial activity, especially against Gram-positive pathogens. The use of PLAL-prepared Pd@Ag core-shell nanoparticles as antimicrobial agents shows promising potential.
Article
Chemistry, Physical
Zainab A. A. Abbas, Khawla S. S. Khashan, Zainab T. T. Hussain
Summary: Pulsed laser ablation in liquid technique was used to prepare pure and doped CdO NPs with varied Ag concentrations. The prepared nanoparticles were characterized using FTIR, XRD, UV-vis spectroscopy, FESEM with EDS, and atomic force microscopy. The morphology of pure CdO NPs changed from agglomerated bundles to nanorods and interconnecting web architectures as Ag concentration increased. The gas-sensing response of the composite nanoparticles' sensor to NO2 was 46, which was 1.8 times larger than the response of the pure CdO NP sensor (24.9), indicating that oxidizing gas (NO2) was less sensitive to Ag-doped CdO nanocomposite sensors than reducing gas (H2S).
Article
Chemistry, Physical
Salah S. Hamd, Asmiet Ramizy, Raid A. Ismail
Summary: The effect of laser fluence on the properties of boron carbide nanoparticles synthesized via pulsed laser ablation in ethanol was studied. It was found that the laser fluence affected the morphology, size, and optical properties of the nanoparticles. Furthermore, the fabrication and characterization of BxC NPs/SiO2/Si heterojunction photodetectors were demonstrated.
Article
Chemistry, Physical
Suaad S. Shaker, Raid A. Ismail, Ban K. Mohammed
Summary: High-performance photovoltaic devices with core-shell structures can be obtained by optimizing the preparation conditions. This study used laser ablation in liquid to fabricate graphene oxide@ZrO2/p-Si heterojunction photodetectors and investigated the effect of an external magnetic field on the properties of the core-shell structure. The results show that the magnetic field can improve the crystallinity of the core-shell, increase the optical energy gap, and reduce particle aggregation.
Article
Engineering, Electrical & Electronic
Faris M. Ahmed, Ali M. Muhammed Ali, Raid A. Ismail, Makram A. Fakhri, Evan T. Salim
Summary: This study investigates the effect of varying deposition time on the properties of CdS films deposited by chemical bath deposition technique. The results show that deposition time affects the crystal structure, morphology, and optical energy gap of the CdS films. Adjusting the deposition time allows for the fabrication of CdS films with different properties.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Physics, Condensed Matter
Ali M. Muhammed Ali, Faris M. Ahmed, Raid A. Ismail, Makram A. Fakhri, Evan T. Salim, Khawla S. Khashan
Summary: This study investigates the effect of molar concentration on the structural, optical, and electrical properties of nanostructured CdS film prepared by chemical bath deposition. The results demonstrate that the energy gap of CdS increases with increasing molarity, and the optoelectronic properties of CdS/Si heterojunction photodetectors are also influenced by molar concentration.
PHYSICA B-CONDENSED MATTER
(2023)
Article
Multidisciplinary Sciences
Makram A. Fakhri, Haneen D. Jabbar, Mohammed Jalal Abdulrazzaq, Evan T. Salim, Ahmad S. Azzahrani, Raed Khalid Ibrahim, Raid A. Ismail
Summary: In this study, GaN thin films were deposited on porous silicon substrates via pulsed laser deposition at different substrate temperatures. The structural and optical properties of the films were investigated. The results showed that the GaN/PSi photodetector prepared at 300°C exhibited the best performance.
SCIENTIFIC REPORTS
(2023)
Article
Multidisciplinary Sciences
Evan T. Salim, Wafaa K. Khalef, Makram A. Fakhri, Rawan B. Fadhil, Ahmad S. Azzahrani, Raed Khalid Ibrahim, Raid A. Ismail
Summary: Lithium niobite (LiNbO3) nanostructures were synthesized using chemical bath deposition method and decorated with silver nanoparticles (AgNPs) using UV activation method at different immersion durations. The effects of AgNPs on the optical and structural properties were studied and analyzed. XRD results showed a hexagonal structure with a maximum diffraction peak at (012) for all samples, and the existence of silver atoms at 2θ = 38.2° corresponding to the (111) diffraction plane. The optical absorption revealed the presence of a plasma peak related to silver at 350 nm and a reduction in the energy gap with the presence of Ag atom. PL peaks were observed in the visible region of the electromagnetic spectrum, and SEM and AFM studies showed changes in particle morphology and surface roughness with increasing immersion time. FT-IR exhibited an increase in peak intensity for samples decorated with AgNPs, while Raman spectroscopy showed a shift to higher intensity due to the plasmonic effect of Ag nanoparticles. Ag-LiNbO3/Si heterojunction nano-devices were fabricated successfully and showed enhanced optoelectronic properties compared to the pure LiNbO3/Si heterojunction device.
SCIENTIFIC REPORTS
(2023)
Article
Engineering, Electrical & Electronic
Safa A. Abdulrahman, Muslim F. Jawad, Raid A. Ismail
Summary: In this study, a nanostructured cerium oxide thin film was prepared by using pulsed laser deposition as an antireflection coating for silicon solar cells. The experimental results showed that the grain size of the film increased and the carrier concentration decreased with the increase of laser pulses. The maximum power conversion efficiency and fill factor of the silicon solar cell were significantly improved after the deposition with an appropriate number of laser pulses.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
