Control of Cu doping and CdTe/Te interface modification for CdTe solar cells

Copper doping in polycrystalline CdTe thin films and optimal band alignment at the CdTe/back-contact interface are critical for obtaining high performance devices. A CuCl2 solution treatment was used in this work to enhance the p-doping of CdTe. The carrier density of CdTe was increased from 4.72 x 10(13) to 1.11 x 10(14) cm(-3) and the open circuit voltage of the device was obviously improved more than similar to 50 mV from 728 to 783 mV. In order to further improve device performance, Te/Cu bilayer using rapid thermal processing was implemented to reduce barrier at the back contact. The short time-high temperature process efficiently activated the Te/Cu bilayer back contact and precisely controlled the Cu diffusion. The proper dose of Cu diffusion can further increase the p-doping of CdTe (similar to 2.22 x 10(14) cm(-3)), resulting in the apparent increase in response from the CdS spectral region. The chemical reaction occurred between Te and Cu after rapid thermal processing treatments causing the formation of the CuxTe phases, which can form a barrier in the conduction band to reflect electrons and reduce recombination at the back contact. With the increase of the temperature, the open circuit voltage of the device increased. However, the device with excessive Cu contacted at higher temperature showed the reduction in response in the long-wavelength region and decrease in fill factor due to the formation of much more Cu-related recombination states. Finally, open circuit voltage of> 820 mV, and fill factor of> 72% for CdTe solar cells with an area of 0.24 cm(2) were achieved.