Article
Optics
Meili Cui, Jun Ma, Xuemei Wu
Summary: By developing high-quality multilayer SiNx:H films as anti-reflection and passivation coatings, the efficiency of industrial PERC solar cells can be improved. Simulation and experimental results showed that the four-layer SiNx:H film had the best performance, significantly increasing light absorption and short-circuit current density of the cells.
Article
Energy & Fuels
Benedikt Fischer, Wolfhard Beyer, Andreas Lambertz, Maurice Nuys, Weiyuan Duan, Kaining Ding, Uwe Rau
Summary: The application of thin underdense a-Si:H films for passivation of c-Si in SHJ solar cell technology has been investigated. The microstructure of underdense a-Si:H films was studied using Raman spectroscopy, effusion, and secondary ion mass spectrometry. The results showed that molecular hydrogen plays an important role in the passivation process. Solar cells using underdense a-Si:H as i1-layer achieved a maximum efficiency of 24.1%.
Article
Materials Science, Multidisciplinary
Kair Nussupov, Nurzhan Beisenkhanov, Zakhida Bugybay, Assanali Sultanov
Summary: This paper investigates the optical and passivating properties of hydrogenated silicon carbide synthesized by reactive magnetron sputtering for c-Si solar cell application. The SiC:H films were synthesized using a SiC target in an argon-hydrogen ambient at various RF powers. The films' thickness, density, and roughness were measured, and their optical properties were studied by UV-visible spectroscopy. The results show that the refractive index increases with increasing RF power, and the extinction coefficient remains low in most of the visible and near-IR spectrum. The optimal thicknesses for maximum antireflection effect were calculated based on the measured optical constants.
Article
Chemistry, Multidisciplinary
Daniel Brito, Pedro Anacleto, Ana Perez-Rodriguez, Jose Fonseca, Pedro Santos, Marina Alves, Alessandro Cavalli, Deepanjan Sharma, Marcel S. S. Claro, Nicoleta Nicoara, Sascha Sadewasser
Summary: This study proposed and examined the fabrication of Sb2Se3 thin-film solar cells using pulsed hybrid reactive magnetron sputtering. The influence of growth temperature and Se pulse period on morphology, crystal structure, and composition was investigated. The solar cell performance was assessed through current-voltage characteristics, achieving a power conversion efficiency of 3.7% for a Sb2Se3 solar cell with 900 nm thickness, deposited at 270°C and using Se pulses with 0.1 s duration and 0.5 s period.
Article
Energy & Fuels
Vaibhav V. Kuruganti, Daniel Wurmbrand, Thomas Buck, Sven Seren, Miro Zeman, Olindo Isabella, Fabian Geml, Heiko Plagwitz, Barbara Terheiden, Valentin D. Mihailetchi
Summary: Although interdigitated back contact (IBC) architecture produces the most efficient solar cells, it is challenging to make them cost-effective and industrially viable. Single-sided atmospheric pressure chemical vapor deposition (APCVD) is investigated as a potential method for fabricating IBC solar cells due to its advantages of reducing thermal budget, simplifying wet bench processing, and eliminating the need for an additional masking layer. Experimental results showed that a full APCVD IBC solar cell achieved a high conversion efficiency of 22.8%, comparable to commercially available full-tube diffused ZEBRA (R) IBC solar cells.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Chemistry, Multidisciplinary
Minjee Ko, Hyeon-Seo Choi, Seong-Ho Baek, Chang-Hee Cho
Summary: In this study, the optical properties of ZnO nanoneedle arrays were investigated and found to possess broadband anti-reflection, omni-directionality, and polarization insensitivity. When a ZnO nanoneedle array was prepared on the surface of SiNx/planar Si solar cells, it resulted in a significant increase in power conversion efficiency and external quantum efficiency, as well as incident angle- and polarization-insensitive characteristics.
NANOSCALE ADVANCES
(2022)
Article
Energy & Fuels
Lilan Wen, Lei Zhao, Guanghong Wang, Xiaojie Jia, Xiaohua Xu, Shiyu Qu, Xiaotong Li, Xianyang Zhang, Ke Xin, Jihong Xiao, Wenjing Wang
Summary: The trilayer a-SiOx:H(i) stacked passivation structure was designed for SHJ solar cells on n-type c-Si wafer to improve their fill factor (FF). By depositing a-SiOx:H(i) layers with different oxygen contents using PECVD, highly efficient SHJ solar cells with an average efficiency of 25.37% were achieved. The trilayer passivation scheme demonstrated higher JSC, VOC, and slightly increased FF compared to solar cells with complete a-Si:H passivation layers.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Materials Science, Coatings & Films
Marta P. Ferreira, D. Martinez-Martinez, J. -B. Chemin, P. Choquet
Summary: In order to address the issues of stability and insulating layer formation during the growth of alumina films by reactive magnetron sputtering, an active feedback reactive sputtering control method was explored. Al2O3 thin films were deposited using high-power impulse magnetron sputtering (HiPIMS) and mid-frequency (MF) at different powers and deposition temperatures. X-ray diffraction analysis showed that polycrystalline γ-Al2O3 films were formed, except at a deposition temperature of 200 degrees C where the films were amorphous. Energetic depositions and the use of HiPIMS resulted in films with higher grain density and refractive index, similar to α-Al2O3. HiPIMS deposition also induced higher compressive stress compared to MF, due to the higher energy and intensity of ions. The combination of MF + HiPIMS led to higher deposition rates, lower compressive stress, and lower crystallinity compared to HiPIMS alone.
SURFACE & COATINGS TECHNOLOGY
(2023)
Article
Instruments & Instrumentation
Daoming You, Yu Jiang, Yingchun Cao, Wentao Guo, Manqing Tan
Summary: With the development of silicon-based photonics, silica and silicon nitride anti-reflection coatings with tunable refractive index were deposited by ion-assisted reactive magnetron sputtering. The optimized coatings exhibited average reflectance of 0.74% for single-layer and below 0.35% for multi-layer coatings. These coatings have broadband low reflectance and high deposition quality, making them suitable for optical communication devices.
INFRARED PHYSICS & TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
M. Arroyave, G. Bejarano, J. David, J. Hernandez
Summary: Thin rhenium nitride films were deposited on metal substrates using reactive radio frequency magnetron sputtering, with various process parameters affecting the stability and hardness of the coatings. Validated through XPS and XRD measurements, the more stable coatings exhibited lower hardness due to the presence of metallic rhenium and rhenium oxides.
Article
Chemistry, Physical
Tae Sik Koh, Periyasamy Anushkkaran, Jun Beom Hwang, Sun Hee Choi, Weon-Sik Chae, Hyun Hwi Lee, Jum Suk Jang
Summary: In this study, an Al-Zr/HT photoanode was fabricated by magnetron sputtering deposition of an Al-layer on Zr-doped FeOOH samples. The correlations between the thicknesses of the sputtered Al-layer and the photoelectrochemical characteristics were investigated. The optimized Al-Zr/HT photoanode exhibited higher photocurrent and lower onset potential compared to the bare Zr/HT photoanode.
Article
Chemistry, Physical
Zongyang Peng, Zhuang Zuo, Qi Qi, Shaocong Hou, Yongping Fu, Dechun Zou
Summary: Exploring deposition techniques suitable for industrial production is important for perovskite solar cells (PSCs). Magnetron sputtering, a well-developed vapor deposition technique, offers advantages such as wide material selection and fast deposition speed. Depositing all functional layers of PSCs using magnetron sputtering can improve cost and stability.
ACS APPLIED ENERGY MATERIALS
(2023)
Article
Energy & Fuels
Hasan Huseyin Canar, Gence Bektas, Rasit Turan
Summary: In this study, the optical, chemical, and electrical properties of SiNx and SiOxNy films prepared under different process conditions were experimentally analyzed. The C-V measurements showed that SiOxNy films have lower interface state density and fixed charge density than SiNx films. Additionally, calculations on the FTIR spectra indicated that SiNx films have a significantly higher hydrogen amount compared to SiOxNy films, which is important for reducing interface traps. The passivation results obtained from PCD measurement were explained using C-V and FTIR measurements for single SiNx, single SiOxNy, and their stack layers on p-type and n-type Si wafers. The results suggest that depositing a very thin SiOxNy layer with low Dit beneath SiNx layer with high Qf and H amount provides superior passivation on p-type and n-type Si wafers, and this passivation is further improved by a subsequent fast-firing process.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Chemistry, Physical
C. M. Furqan, Jacob Y. L. Ho, H. S. Kwok
Summary: This article reports the growth of GaN thin film on low-cost electronic substrate using magnetron sputtering method. Various characterization techniques were used to explore the optical and structural properties, revealing the effects of different growth parameters on the film properties. XRD studies, raman spectroscopy, as well as mu-PL and optical transmittance experiments provided insights into the thin film properties under different growth conditions.
SURFACES AND INTERFACES
(2021)
Article
Chemistry, Physical
Rafal Chodun, Marlena Dypa, Bartosz Wicher, Katarzyna Nowakowska - Langier, Sebastian Okrasa, Roman Minikayev, Krzysztof Zdunek
Summary: This study investigated a Gas Injection Magnetron Sputtering technique for target temperature control by using various frequencies of plasma pulse generation to limit heat dissipation. The results showed that target temperature did not affect the chemical and phase composition of coatings, but the thickness of fabricated coatings increased in hot sputtering processes.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Sijie Ge, Heng Gao, Ruijiang Hong, Jianjun Li, Yaohua Mai, Xianzhong Lin, Guowei Yang
Article
Materials Science, Multidisciplinary
Wei Wang, Qianli Li, Ang Zheng, Xiaolei Li, Zeyu Pan, Jinchun Jiang, Linquan Zhang, Ruijiang Hong, Lin Zhuang
RESULTS IN PHYSICS
(2019)
Article
Physics, Applied
Yunfeng Liang, Hai Zhu, Huying Zheng, Ziying Tang, Yaqi Wang, Haiyuan Wei, Ruijiang Hong, Xuchun Gui, Yan Shen
Summary: The research findings indicate that with an increase in the cavity size, the competition between different orders of lasing modes will become more intense, with a significant polarization dependence for high-order whispering gallery mode (WGM) lasing. Furthermore, the competition of WGM lasing modes is strongly influenced by the diameter of cavities and excitation intensities.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Energy & Fuels
Shenghao Li, Manuel Pomaska, Jan Hoss, Jan Lossen, Kaifui Qiu, Ruijiang Hong, Friedhelm Finger, Uwe Rau, Kaining Ding
Summary: Hot-wire chemical vapor deposition was used to rapidly grow high-quality phosphorus-doped amorphous silicon thin films for carrier-selective passivating contacts on polycrystalline silicon. Material properties such as microstructures were analyzed to optimize passivating contact performance. The study found that a certain microstructure of the films is crucial for passivation quality and contact conductance.
PROGRESS IN PHOTOVOLTAICS
(2021)
Article
Energy & Fuels
Sijie Ge, Han Xu, Yuxiang Huang, Santhosh Kumar Karunakaran, Ruijiang Hong, Jianjun Li, Yaohua Mai, Ening Gu, Xianzhong Lin, Guowei Yang
Article
Energy & Fuels
Longlong Zeng, Chunhong Zeng, Yunfeng Liang, Ye Yuan, Genghua Yan, Ruijiang Hong
Summary: Molybdenum back contact is crucial for CIGS solar cells. A novel molybdenum oxide preparation method was introduced through oxygen plasma treatment of the molybdenum layer. Back passivation was achieved by forming a reverse p-n junction, and the transport of holes was assisted by the molybdenum oxide's gap states, leading to an efficiency improvement of 34.1% in treated solar cells.
Article
Chemistry, Physical
Shenghao Li, Manuel Pomaska, Andreas Lambertz, Weiyuan Duan, Karsten Bittkau, Depeng Qiu, Zhirong Yao, Martina Luysberg, Paul Steuter, Malte Koehler, Kaifu Qiu, Ruijiang Hong, Hui Shen, Friedhelm Finger, Thomas Kirchartz, Uwe Rau, Kaining Ding
Summary: In this study, TCO layers are substituted by utilizing lateral conduction of c-Si absorber in SHJ solar cells, achieving a TCO-free design with low series resistivity and good fill factor. Suppressing metal diffusion into a-Si:H layer through ozone treatment at the a-Si:H/metal interface improves passivation quality without increasing contact resistivity, enabling SHJ solar cells with TCO-free front contacts to achieve efficiencies exceeding 22%.
Article
Chemistry, Multidisciplinary
Saqib Nawaz Khan, Sijie Ge, Ening Gu, Santhosh Kumar Karunakaran, Wentao Yang, Ruijiang Hong, Yaohua Mai, Xianzhong Lin, Guowei Yang
Summary: This study aims to achieve high-performance CZTSSe solar cells by carefully tailoring annealing conditions and using rapid thermal processing to shorten the annealing time. It is found that increasing annealing temperature and time can improve crystalline quality but may deteriorate device performance due to increasing parasitic losses. By increasing the amount of Se, a highly crystalline absorber can be obtained within a short annealing time, resulting in a 5.56% efficient CZTSSe solar cell with reduced parasitic losses.
ADVANCED MATERIALS INTERFACES
(2021)
Article
Energy & Fuels
Sijie Ge, Han Xu, Saqib Nawaz Khan, Wentao Yang, Ruijiang Hong, Yaohua Mai, Ening Gu, Xianzhong Lin, Guowei Yang
Summary: This study presents a strategy to suppress the over-thick Mo(S-x,Se1-x)(2) layer on the back contact by adjusting the proportion of sulfur, which leads to a significant improvement in total area efficiency of flexible CZTSSe solar cells. The method is also applicable to other absorber materials and demonstrates universality.
Article
Construction & Building Technology
Haofeng Lin, Zeyu Qiu, Peinian Huang, Longlong Zeng, Yunfeng Liang, Chunhong Zeng, Ruixi Lin, Mingyu Yuan, Ruijiang Hong
Summary: In this study, a novel method combining sol-gel process with evaporation concentration was used to prepare antireflective coatings based on hollow silica nanoparticles, which exhibited high transparency and robust resistance to moisture. By adjusting the concentration degree and MTES content, the refractive index and water contact angle of the coatings could be tuned, making them suitable for industrial production.
CONSTRUCTION AND BUILDING MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Saqib Nawaz Khan, Sijie Ge, Yuxiang Huang, Han Xu, Wentao Yang, Ruijiang Hong, Yaohua Mai, Ening Gu, Xianzhong Lin, Guowei Yang
Summary: By developing a composition gradient strategy, this research successfully fabricated a 6.82% efficient CZTSSe solar cell on an FTO substrate. The composition gradient enhances the crystallinity of the absorber, reduces surface roughness, and decreases device parasitic losses, leading to higher fill factor, open-circuit voltage, and conversion efficiency.
SCIENCE CHINA-MATERIALS
(2022)
Article
Energy & Fuels
Yunfeng Liang, Chunhong Zeng, Longlong Zeng, Genghua Yan, Ye Yuan, Xianzhong Lin, Hai Zhu, Yaohua Mai, Ruijiang Hong
Summary: By controlling the proportion and distribution of metal precursors, a self-seed inducing effect can be achieved during soft selenization, resulting in improved efficiency and reduced open circuit voltage deficit for CZTSe solar cells.
Article
Chemistry, Multidisciplinary
Zeyu Qiu, Haofeng Lin, Longlong Zeng, Yunfeng Liang, Chunhong Zeng, Ruijiang Hong
Summary: An ultra-scratch-resistant, hydrophobic and transparent coating was fabricated using the sol-gel method. The coating has a double-cross-linked network structure, which improves its abrasion resistance. It also exhibits excellent stability and transparency, making it suitable for various practical applications.
APPLIED SCIENCES-BASEL
(2022)
Article
Materials Science, Multidisciplinary
Bangqi Jiang, Genghua Yan, Yao Xiao, Ye Yuan, Chuanxi Zhao, Wenjie Mai, Ruijiang Hong
Summary: By doping Mn into the solution, a low-temperature synthesis route for high-quality Cs2AgBiBr6 perovskite film was developed, leading to the fabrication of flexible photodetectors with excellent self-power characteristics and satisfying photoelectric performance.
JOURNAL OF MATERIALS SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Wei Wang, Ang Zheng, Yifan Jiang, Dongsheng Lan, Fenghua Lu, Lelin Zheng, Lin Zhuang, Ruijiang Hong
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
