4.1 Article

Micro-pyramidal structure fabrication on polydimethylsiloxane (PDMS) by Si (100) KOH wet etching

Journal

JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 71, Issue 8, Pages 506-509

Publisher

KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.71.506

Keywords

Wet etching; Potassium hydroxide; Si mold; Pattern transfer; PDMS

Funding

  1. Korea Institute of Science and Technology (KIST) [2E26140]
  2. National Research Foundation of Korea (NRF) grant - Korean government (MSIP) [NRF-2015R1A4A1041631]
  3. Hallym university's Research Fund [HRF-201608-000]

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A high degree of accuracy in bulk micromachining is essential to fabricate micro-electro-mechanical systems (MEMS) devices. A series of etching experiments is carried out using 40 wt% KOH solutions at the constant temperature of 70 degrees C. Before wet etching, SF6 and O-2 are used as the dry etching gas to etch the masking layers of a 100 nm thick Si3N4 and SiO2, respectively. The experimental results indicate that (100) silicon wafer form the pyramidal structures with (111) single crystal planes. All the etch profiles are analyzed using Scanning Electron Microscope (SEM) and the wet etch rates depend on the opening sizes. The manufactured pyramidal structures are used as the pattern of silicon mold. After a short hardening of coated polydimethylsiloxane (PDMS) layer, micro pyramidal structures are easily transferred to PDMS layer.

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