Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

Published 2017 View Full Article

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Title
Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors
Authors
Keywords
a-IGZO, a-InGaZnO, Annealing, He, Solution-processed
Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 71, Issue 4, Pages 209-214
Publisher
Korean Physical Society
Online
2017-08-19
DOI
10.3938/jkps.71.209

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